Phase Formation Process in CdSe Thin Films

  • L.N. Ibrahimova Institute of Natural Resources, Nakhchivan, Azerbaijan
  • N.M. Abdullayev Institute of Physics, Ministry of Science and Education of Azerbaijan, Baku, Azerbaijan
  • M.E. Aliyev Nakhchivan State University, Nakhchivan, Azerbaijan
  • G.A. Garashova Western Caspian University, Baku, Azerbaijan
  • Y.I. Aliyev dAzerbaijan State Pedagogical University, Baku, Azerbaijan; Western Caspian University, Baku, Azerbaijan
Keywords: chemical deposition, CdSe thin film, crystal structure, X-ray diffraction


In this work, thin films of cadmium selenide of difrent thicknesses were obtained by chemical deposition and the processes of phase formation in them were studied. Thin layers with a thickness of d = 150 – 500 nm were obtained. Structural studies were carried out using X-ray diffraction. The spectra obtained at room temperature were analyzed. The presence of structural features of the CdSe compound in thin layers has been established. After a thickness d = 400 nm, the process of phase formation begins. The observed atomic planes and Miller indices during the phase formation process are determined.


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How to Cite
Ibrahimova, L., Abdullayev, N., Aliyev, M., Garashova, G., & Aliyev, Y. (2024). Phase Formation Process in CdSe Thin Films . East European Journal of Physics, (1), 493-496.