Investigation of the Optical Properties of Metal Ion-Intercalated GaSe Semiconductor Monocrystals
Abstract
In this study, the XRD method was used to characterise the structural and phase properties of GaSe monocrystals, and the impact of Cu ion intercalation on their optical properties was investigated. An increase in absorption (ABS) was observed in the 200–400 nm region as a result of the addition of Cu ions, and new optical transitions occurred around 600 nm. Overall, observable variations in absorption levels have been observed over the 200–800 nm spectral range. Tauc analysis revealed that the band gap narrowed from approximately 2 eV to about 1.88 eV upon intercalation and slightly widened to about 2.15 eV with photo-intercalation. These results suggest that Cu ion intercalation can be applied to modify the optical properties of GaSe monocrystals, increasing their potential for use in nonlinear optical devices, photonics, and sensor technologies. The findings also demonstrate that intercalation is an appropriate technique for regulating the physical characteristics of layered materials.
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