Pushing Efficiency Limits: SCAPS-Based Analysis of GaAs and BAs Solar Cells for Next-Generation Photovoltaics

  • Merad Laarej University of Tlemcen, Faculty of Sciences, Department of Physics, Unity of Research “Materials and Renewable Energies”, Tlemcen, Nouveau Pôle, Mansourah, Algeria https://orcid.org/0000-0003-1753-7528
  • Mama Bouchaour University of Tlemcen, Faculty of Sciences, Department of Physics, Unity of Research “Materials and Renewable Energies”, Tlemcen, Nouveau Pôle, Mansourah, Algeria https://orcid.org/0009-0007-3204-0583
  • Imane Bouazzaoui University of Tlemcen, Faculty of Sciences, Department of Physics, Unity of Research “Materials and Renewable Energies”, Tlemcen, Nouveau Pôle, Mansourah, Algeria
DOI: https://doi.org/10.26565/2312-4334-2025-4-25
Keywords: GaAs, BAs, Photovoltaic, SCAPS Software, Conversion Efficiency (η)

Abstract

The present study utilizes SCAPS software to simulate and analyze the semiconductor materials gallium arsenide (GaAs) and boron arsenide (BAs) for photovoltaic applications. We outline the methodology, emphasizing critical factors considered during simulation. The performance of solar cells is investigated through quantum efficiency and photovoltaic performance curves. Additionally, the observed trends, key differences between GaAs and BAs, and their implications for advancing high-efficiency solar cells are discussed.

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Published
2025-12-08
Cited
How to Cite
Laarej, M., Bouchaour, M., & Bouazzaoui, I. (2025). Pushing Efficiency Limits: SCAPS-Based Analysis of GaAs and BAs Solar Cells for Next-Generation Photovoltaics. East European Journal of Physics, (4), 274-283. https://doi.org/10.26565/2312-4334-2025-4-25
Issue
No. 4 (2025): East European Journal of Physics
Section
Original Papers

Copyright (c) 2025 Laarej Merad, Mama Bouchaour, Imane Bouazzaoui

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