Improvement structural and dielectric properties of PS/SiC/Sb2O3 nanostructures for nanoelectronics devices

  • Маджід Алі Хабіб Вавилонський університет, освітній коледж чистих наук, фізичний факультет, Ірак https://orcid.org/0000-0001-5064-2835
  • Наврас Карім Аль-Шаріфі Вавилонський університет, освітній коледж чистих наук, фізичний факультет, Ірак
Ключові слова: нанокомпозити, полістирол, наночастинки SiC і Sb2O3, електричні властивості для змінного струму

Анотація

У поточному дослідженні нанокомпозити PS/SiC/Sb2O3 були виготовлені методом лиття з розчину з різними концентраціями наночастинок Sb2O3 (0,2,4,6,8) % мас. Досліджено структурні та діелектричні властивості нанокомпозитів (PS/SiC/ Sb2O3). Повний емісійний скануючий електронний мікроскоп (FE-SEM), який використовується для дослідження поверхні нанокомпозиту. FE-SEM підтвердив хороший розподіл НЧ SiC і Sb2O3 в полімерній матриці. Під оптичним мікроскопом (ОМ) було перевірено морфологію нанокомпозиту, що довело, що полістирол є винятково змішуваним, як видно з його більш тонкої форми та гладкої однорідної поверхні, тоді як концентрація добавок SiC та Sb2O3 NPs добре розподілена на поверхні полімерного плівки нанокомпозиту. Інфрачервоною Фур'є спектроскопія (FTIR) досліджено структуру нанокомпозиту та отримана інформація про коливальні властивості молекул. З FTIR додавання SiC і Sb2O3 NP викликало взаємодію з полімерною матрицею. За допомогою FTIR доведено, що існує фізична взаємодія між полістиролом і наночастинками SiC і Sb2O3. Відповідно до електричних властивостей змінного струму діелектрична проникність і діелектричні втрати НК зменшуються зі збільшенням частоти прикладеного електричного поля та збільшуються зі збільшенням концентрації наночастинок SiC/Sb2O3, тоді як електропровідність змінного струму зростає зі збільшенням частоти та концентрації НЧ SiC/Sb2O3. Результати структурних та електричних характеристик показують, що нанокомпозити PS/SiC/Sb2O3 можуть бути використані для різних електронних пристроїв.

Завантаження

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Опубліковано
2023-06-02
Цитовано
Як цитувати
Хабіб, М. А., & Аль-Шаріфі, Н. К. (2023). Improvement structural and dielectric properties of PS/SiC/Sb2O3 nanostructures for nanoelectronics devices. Східно-європейський фізичний журнал, (2), 341-347. https://doi.org/10.26565/2312-4334-2023-2-40