Вплив опромінення на властивості CdTe детекторів

  • A. Kondrik National Science Center «Kharkov Institute of Physics and Technology»1, Academicheskaya str., Kharkov, 61108, Ukraine
Ключові слова: детектори, радіаційні дефекти, моделювання, CdTe

Анотація

A comparative analysis of published experimental data about the concentration, capture cross section and type of traps in CdTe: Cl has been carried out. Based on the performed analysis an identification of registered levels on acceptor and donor type was realized. The numerical simulations have been performed to  study the effect of radiation defects arising under the influence of hard X-ray irradiation on the electrical and detector properties of cadmium telluride. The role of radiation-induced and background defects has been determined for the processes of degradation of the spectroscopic characteristics of CdTe:Cl detectors operated under conditions of ionizing radiation.

Завантаження

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Біографія автора

A. Kondrik, National Science Center «Kharkov Institute of Physics and Technology»1, Academicheskaya str., Kharkov, 61108, Ukraine

Посилання

Derek S. Bale, Csaba Szeles Nature of polarization in wide-bandgap semiconductor detectors under high-flux irradiation: Application

to semi-insulating Cd1−xZnxTe // Physical Review B.– 2008. – Vol. 77. – Issue 3. – P. 035205-1–035205-16.

Fraboni B., Pasquini L., Castaldini A., Cavallini A., Siffert P. X-ray irradiation effects on the trapping properties of Cd1−xZnxTe

detectors // Journal of Applied Physics. – Vol. 106. – 2009, No.9. – P. 093713.

Fraboni B., Cavalcoli D., Cavallini A., and Fochuck P. Electrical activity of deep traps in high resistivity CdTe: Spectroscopic

characterization // Journal of Applied Physics. – 2009. – Vol. 105. – P. 073705–6.

Babentsov V., Franc J., James R.B. Compensation and carrier trapping in indium-doped CdTe: Contributions from an important

near-mid-gap donor // Applied Phys. Letters Vol. 94.– 2009. – P. 052102.

Carini G.A., Bolotnikov A.E., Camarda G.S. Effect of Te precipitates on the performance of CdZnTe detectors // Applied

Physics Letters.– 2006. – Vol. 88. – P.143515-1 – 143515-3

Gul R., Keeter K., Rodriguez R., Bolotnikov A.E. at al. Point defects in Pb-, Bi-, and In-doped CdZnTe detectors: deep-level

transient spectroscopy (DLTS) measurements // Journal of Electronic Materials. – 2012. – Vol. 41, No. 3. – P. 488-493.

Cavallini A., Fraboni B. Defective states induced in CdTe and CdZnTe detectors by high and low energy neutron irradiation //

Journal of Applied Physics. – 2003. – Vol. 94, No.5. –P. 3135-3142.

Belas E., Grill R., Franc J., Hlídek, P. Linhart V., Slavíček T., Höschl P. Correlation of electrical and optical properties with

charge collection efficiency of In-doped and In+Si co-doped CdTe // Nuclear Instruments and Methods in Physics Research

Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. – 2008. – Vol. 591. - Issue 1. - P. 200–202.

Gul R., Bolotnikov A., Kim H.K., Rodriguez R., Keeter K., Li Z., Gu G., James R.B. Point Defects in CdZnTe Crystals Grown

by Different Techniques //Journal of Electronic Materials. – 2011. – Vol. 40, No. 3. – P. 274–279.

Cavallini A., Fraboni B., Dusi W., Zanarini M., Hage-Ali M., Siffert P. Defects introduced in cadmium telluride by γ irradiation

// Journal of Applied Physics. – 2001. – Vol. 89, No. 8. – P. 4664–4666.

Fraboni B., Cavallini A., Auricchio N., Dusi W., Zanarini M., Siffert P. Time and thermal recovery of irradiated CdZnTe detectors

// Semiconductor Science and Technology. - 2006. - Vol. 21.– No.3. – P. 1034-1040.

Kondrik A.I. Modelirovanie svoistv CdZnTe i parametrov detektorov γ-izlucheniya na ego osnove // Tekhnologiya i konstruirovanie

v elektronnoi apparature. – 2004. – No.6. – S. 17-22.

Tapiero M., Benjelloun N., Zielinger J.P. Hamd S.E., Noguet C. Photoinduced current transient spectroscopy in high-resistivity

bulk materials: Instrumentation and methodology // Journal of Applied Physics. – 1988.– Vol. 64. – P.4006-4012.

Cavallini A., Frabony B., Dusi W. Compensation processes in CdTe-based compounds // Nuclear Science, IEEE Transactions.

– 2005. – Vol. 52. – Issue 5. – P.1964-1967.

Fraboni B., Cavallini A., Auricchio N., Bianconi M. Deep traps induced by 700 keV protons in CdTe and CdZnTe detectors //

Nuclear Science Symposium Conference Record. (Oct. 29 – Nov. 1 2006). San Diego, Canada. – IEEE. – 2006. – P. 3594-

Hofmann D.M, Stadler W., Christmann P., Meyer B.K. Defects in CdTe and Cd1−xZnxTe // Nuclear Instruments and Methods in

Physics Research. – Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. – 1996. – Vol. 380. – Issues

-2. – P. 117-120.

Castaldini A., Cavallini A., Fraboni B. Deep energy levels in CdTe and CdZnTe // Journal of Applied Physics. – 1998. – Vol.

, No. 4. – P. 2121-2126.

Castaldini A., Cavallini A., Fraboni B., Fernandez P., Piqueras J. Midgap traps related to compensation processes in CdTe alloys

// Phys. Rev. B. – 1997. – Vol. 56, No. 23. – P. 14897-14900.

Kondrik A.I. Effektivnost’ sbora zaryadov v datchikakh γ-izluchenia s razlichnoi konfiguratcyei elektrodov // Tekhnologia i

konstruirovanie v elektronnoi apparature. – 2012. – No.4. – S. 47-51.

Stadler W., Hofmann D., Alt H., Muschik T., Meyer B., Weigel E., Mueller-Vogt G., Salk M., Rupp E., Benz K. Optical investigations

of defects in Cd1-xZnxTe // Physical Review B. – 1995.– Vol. 51, No. 16. – P. 10619-10630.

Allen J.W. Spectroscopy of lattice defects in tetrahedral II-VI compounds // Semiconductor Science and Technology. – 1995.–

Vol. 10, No. 8. – P. 1049-1055.

Fraboni B., Cavallini A., Dusi W. Damage induced by ionizing radiation on CdZnTe and CdTe detectors // Nuclear Science,

IEEE Transactions. – 2004. – Vol. 51. – Issue 3. – P. 1209-1215.

Цитовано
Як цитувати
Kondrik, A. (1). Вплив опромінення на властивості CdTe детекторів. Східно-європейський фізичний журнал, 1(1), 47-52. https://doi.org/10.26565/2312-4334-2014-1-05