Photon-Induced Fermi Level Shifts and Energetic Modulation of Resonant States in Double-Barrier Resonant Tunneling Nanostructures

  • Shokhjakhon O. Mamadaliev Namangan State Technical University, Namangan, Uzbekistan
  • Mukhammadjon G. Dadamirzaev Namangan State Technical University, Namangan, Uzbekistan https://orcid.org/0000-0001-8258-4617
  • Munirakhon K. Uktamova Namangan State Technical University, Namangan, Uzbekistan https://orcid.org/0009-0005-7562-2677
  • Sobirjon R. Boidedaev Namangan State Technical University, Namangan, Uzbekistan
  • Kudiratulla B. Umarov Namangan State Technical University, Namangan, Uzbekistan
  • Yusuf Usmanov Tashkent Institute of Irrigation and Agricultural Mechanization Engineers, National Research University, Tashkent, Uzbekistan
Keywords: Landauer–Büttiker formalism, Quantum tunneling, Photon energy, Fermi–Dirac distribution, Transmission function, Chemical potential shift, Nonlinear conductance

Abstract

This paper presents a theoretical analysis of quantum tunneling mechanisms under photon energy excitation within the framework of the Landauer–Büttiker formalism. The study considers the effects of photon absorption during resonant tunneling, leading to modifications of the Fermi–Dirac distribution and shifts in the chemical potentials. It is shown that photogeneration processes induced by optical excitation enhance the tunneling probability, cause an energy broadening of the transmission function, and result in a shift of the resonant peak in the current–voltage (I–V) characteristics. Based on the proposed model, a nonlinear dependence of quantum conductance on photon energy is established, and it is theoretically demonstrated that an increase in photon energy leads to enhanced tunneling conductance. The developed approach provides a deeper insight into optically excited quantum transport phenomena and establishes a new theoretical basis for the design of light-controlled transport systems in nanoelectronic devices.

Downloads

Download data is not yet available.

References

S. Datta, Quantum Transport: Atom to Transistor, (Cambridge University Press, Cambridge, 2005).

L.L. Chang, L. Esaki, and R. Tsu, “Resonant tunneling in semiconductor double barriers,” Applied Physics Letters, 24(12), 593 595 (1974). https://doi.org/10.1063/1.1655067

S.M. Sze, Y. Li, and K.K. Ng, Physics of Semiconductor Devices, 4th Edition, (Wiley, 2021).

K. Xu, E. Wynne, and W. Zhu, “Resonant Tunneling and Negative Differential Resistance in Black Phosphorus Vertical Heterostructures,” Advanced Electronic Materials, 6(8), 2000318 (2020). https://doi.org/10.1002/aelm.202000318

B. Romeira, L.M. Pessoa, H.M. Salgado, C.N. Ironside, and J.M.L. Figueiredo, “Photo-Detectors Integrated with Resonant Tunneling Diodes,” Sensors, 13(7), 9464–9482 (2013). https://doi.org/10.3390/s130709464

A.C. Seabaugh, and Q. Zhang, “Low-Voltage Tunnel Transistors for Beyond CMOS Logic,” Proceedings of the IEEE, 98(12), 2095–2110 (2010). https://doi.org/10.1109/JPROC.2010.2070470

R. Landauer, “Electrical resistance of disordered one-dimensional lattices,” Philosophical Magazine, 21(172), 863–867 (1970). https://doi.org/10.1080/14786437008238472

M. Büttiker, “Four-terminal phase-coherent conductance. Physical Review Letters,” 57(14), 1761–1764 (1986). https://doi.org/10.1103/PhysRevLett.57.1761

P. Acharya, N. Kumar, A. Dixit, J. Lee, and V. Georgiev, “Impact of interface roughness correlation on resonant tunnelling diode variation,” Scientific Reports, 15, 26815 (2025). https://doi.org/10.1038/s41598-025-07720-0

M. Van Ta, et al., “Terahertz resistor-coupled arrayed resonant-tunneling-diode oscillators with high DC-to-RF efficiency using metal-insulator-metal capacitor,” REV Journal on Electronics and Communications, 14(3), 39–43 (2024). https://doi.org/10.21553/rev-jec.377

M. Sun, et al., “High-frequency resonant tunneling diodes,” IEEE Trans. Electron Devices, 60, 3077–3083 (2013). https://doi.org/10.1109/TED.2013.2274479

K. Kinoshita, et al., “Negative Differential Resistance Device with High Peak-to-Valley Ratio Realized by Subband Resonant Tunneling of Γ-Valley Carriers in WSe₂/h-BN/WSe₂ Junctions,” ACS Nano, 18(42), 28968–28976 (2024). https://doi.org/10.1021/acsnano.4c09569

Z. Zhang, et al., “Toward High-Peak-to-Valley-Ratio Graphene Resonant Tunneling Diodes,” Nano Letters, 23(17), 8132–8139 (2023). https://doi.org/10.1021/acs.nanolett.3c02281

J. Encomendero, V. Protasenko, D. Jena, and H.G. Xing, “Defeating broken symmetry with doping: Symmetric resonant tunneling in noncentrosymmetric heterostructures,” Physical Review B, 107, 125301 (2023). https://doi.org/10.1103/PhysRevB.107.125301

F.A. Giyasova, and M.A. Yuldoshev, “Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon,” Chalcogenide Letters, 22(2), 123–129 (2025). https://doi.org/10.15251/CL.2025.222.123

Sh.B. Utamuradova, F.A. Giyasova, K.N. Bakhronov, M.A. Yuldoshev, M.R. Bekchanova, and B. Ismatov. “Current Transfer Mechanism in A Thin-Based Heterosystem Based on A2B6 Compounds,” East Eur. J. Phys. (3), 325 (2025). https://doi.org/10.26565/2312-4334-2025-3-31

F.A. Giyasova, A.Z. Rakhmatov, Kh.N. Bakhronov, M.A. Yuldoshev, F.A. Giyasov, A.N. Olimov, and N.A. Sattarov, “Physical Principles of Photocurrent Generation in a Silicon-Based Photodiode Structure with a Schottky Barrier,” East Eur. J. Phys. (4), 397 (2025). https://doi.org/10.26565/2312-4334-2025-4-38

M. Uktamova, and Sh. Mamadaliev, “Three-dimensional modeling of the relationship between static tunneling and the optical absorption coefficient in tunnel diodes,” Results in Optics, 22, 100950 (2026). https://doi.org/10.1016/j.rio.2025.100950

Sh. B. Utamuradova, F. A. Giyasova, M. S. Paizullakhanov, S. Yu. Gerasimenko, M. A. Yuldoshev, S. R. Boydedayev, M. R. Bekchanova, “Investigation of the functional capability of modified silicon-based photodiodes structure,” Chalcogenide Letters 22(8), 753 – 764 (2025). https://doi.org/10.15251/CL.2025.228.753

Z.T. Azamatov, Sh.B. Utamuradova, M.A. Yuldoshev, and N.N. Bazarbaev, “Some properties of semiconductor-ferroelectric structures,” East Eur. J. Phys. (2), 187-190 (2023). https://doi.org/10.26565/2312-4334-2023-2-19

F.A. Giyasova, Kh.N. Bakhronov, M.A. Yuldoshev, I.B. Sapaev, R.G. Ikramov, F.A. Giyasov, M.R. Bekchanova, et al., “Study of the influence of temperature on the transitions of the CdS/Si/CdTe heterosyste,” East Eur. J. Phys. (4), 461 (2025). https://doi.org/10.26565/2312-4334-2025-4-47

M.G. Dadamirzaev, M.K. Uktamova, Sh. Rakhmanova, and G.A. Ibadullayev, “Simulation of tunnel diode I-V Characteristics with photocurrent and phonon-assisted processes,” East Eur. J. Phys. (4), 675-681 (2025). https://doi.org/10.26565/2312-4334-2025-4-73

M. Acciai, L. Arrachea, and J. Splettstoesser, “Quantum transport phenomena induced by time-dependent fields,” La Rivista del Nuovo Cimento, 48(10), 653–798 (2025). https://doi.org/10.1007/s40766-025-00074-3

G. Platero, R. Aguado, “Photon-assisted transport in semiconductor nanostructures,” Physics Reports, 395(1–2), 1–157 (2004). https://doi.org/10.1016/j.physrep.2004.01.004

B. Kaestner, and V. Kashcheyevs, “Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: A review of current progress,” Reports on Progress in Physics, 78(10), 103901 (2015). https://doi.org/10.1088/0034-4885/78/10/103901

A. Rogalski, P. Martyniuk, and M. Kopytko, “Type-II superlattice photodetectors versus HgCdTe photodiodes,” Progress in Quantum Electronics, 68, 100228 (2019). https://doi.org/10.1016/j.pquantelec.2019.100228

Gulyamov, G., Dadamirzayev, M. G., Uktamova, K. M., & Mislidinov, B. Z. “The effect of a heated electron on the VAX of a tunnel diode,” AIP Conference Proceedings, 2700(1), 050007 (2023). https://doi.org/10.1063/5.0126516

G. Gulyamov, S.B. Utamuradova, M.G. Dadamirzaev, N.A. Turgunov, M.K. Uktamova, K.M. Fayzullaev, A.I. Khudayberdiyeva, and A.I. Tursunov, East Eur. J. Phys. (2), 221 (2023). https://doi.org/10.26565/2312-4334-2023-2-24

M.G. Dadamirzaev, M.K. Uktamova, S.R. Boydedayev, M.A. Yuldoshev, and S.H. Mamadaliev, “Theoretical Analysis of Photon-Energy-Controlled Quantum Tunneling Mechanisms Based on the Landauer–Büttiker Formalism,” Physics AUC, 35, 76-84 (2025). https://share.google/EqKveBzVq9UCc2Ndc

P.R. Berger, G. Gulyamov, M.G. Dadamirzaev, M.K. Uktamova, and S.R. Boidedaev, “Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode,” Romanian Journal of Physics, 69(3–4), Article 609 (2024). https://doi.org/10.59277/RomJPhys.2024.69.609

U.I. Erkaboev, and R.G. Rakhimov, “Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells,” e-Journal of Surface Science and Nanotechnology, 22(2), 98–106 (2024). https://doi.org/10.1380/ejssnt.2023-070

U.I. Erkaboev, R.G. Rakhimov, “Oscillations of Transverse Magnetoresistance in the Conduction Band of Quantum Wells at Different Temperatures and Magnetic Fields,” Journal of Computational Electronics, 23(2), 279–290 (2024). https://doi.org/10.1007/s10825-024-02130-3

Published
2026-09-07
Cited
How to Cite
Mamadaliev, S. O., Dadamirzaev, M. G., Uktamova, M. K., Boidedaev, S. R., Umarov, K. B., & Usmanov, Y. (2026). Photon-Induced Fermi Level Shifts and Energetic Modulation of Resonant States in Double-Barrier Resonant Tunneling Nanostructures. East European Journal of Physics, (3), 539-549. https://doi.org/10.26565/2312-4334-2026-3-49

Most read articles by the same author(s)