Multi-Field Modulation of Tunneling Current, Differential Resistance and Noise in n⁺–GaAs/AlGaAs Tunnel Diodes
Abstract
This work presents a theoretical study of differential resistance and noise in tunnel diodes under combined optical, magnetic, and high-frequency electromagnetic fields. The tunneling current is modeled using the Tsu–Esaki approach with WKB approximation, while magnetic field effects are introduced via Landau quantization. Optical excitation leads to quasi-Fermi-level splitting and enhances the tunneling current, thereby modulating and smoothing the negative differential resistance (NDR) region. High-frequency fields further modify the barrier transparency, thereby affecting the device's dynamic behavior. Noise analysis based on shot noise and Fano factor shows that a high signal-to-noise ratio (SNR) can be maintained under external perturbations. A generalized multi-field model for n⁺–GaAs/AlGaAs heterostructures is proposed, demonstrating controllable tunneling dynamics, low noise, and stable operation in the sub-THz range. The results indicate strong potential for applications in high-speed optoelectronics and radiation-resistant space electronics.
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S.M. Sze, Y. Li, and K.K. Ng, Physics of Semiconductor Devices, 4th Edition, (Wiley, 2021).
B.M. Ali, A.A. Abdulazez, G.P. Priya, S. Ray, A. Pal, R. Sharma, S. Usanov, et al., “Modification of graphenylene nanostructure as a promising material for adsorption and sensing of 5-fluorouracil,” First-principles investigations. Journal of Molecular Graphics and Modelling, 142, 109210 (2026). https://doi.org/10.1016/j.jmgm.2025.109210
Z.T. Azamatov, Sh.B. Utamuradova, M.A. Yuldoshev, and N.N. Bazarbaev. “Some properties of semiconductor-ferroelectric structures,” East Eur. J. Phys. (2), 187-190. (2023), https://doi.org/10.26565/2312-4334-2023-2-19
M.S. Kukurudziak, V.M. Lipka, and V.V. Ryukhtin, “Silicon p-i-n Mesa-Photodiode Technology, East Eur. J. Phys. (3), 385 (2024). https://doi.org/10.26565/2312-4334-2024-3-47
J.R. Yusupov, M. Ehrhardt, Kh.Sh. Matyokubov, and D.U. Matrasulov, “Driven transparent quantum graphs,” Physica Scripta, 100(7), (2025). https://doi.org/10.1088/1402-4896/ade014
M.A. Yuldoshev, Z.T. Azamatov, A.B. Bakhromov, and M.R. Bekchanova, “Investigation of Morphological and Optical Properties of LiNbO3 and LiNbO3:Fe 0.03 wt.% Crystals,” East Eur. J. Phys. (4), 250 (2024). https://doi.org/10.26565/2312-4334-2024-4-25
S. Rakhmanov, K. Matchonov, H. Yusupov, K. Nasriddinov, and D. Matrasulov, “Optical high harmonic generation in Dirac materials,” Eur. Phys. J. B, 98, 35 (2025). https://doi.org/10.1140/epjb/s10051-025-00885-7
L. Esaki, “New Phenomenon in Narrow Germanium p–n Junctions,” Phys. Rev. 109, 603–604 (1958). https://doi.org/10.1103/PhysRev.109.603
E.O. Kane, “Theory of tunneling,” J. Appl. Phys. 32, 83–91 (1961). https://doi.org/10.1063/1.1735965
R.Tsu, and L. Esaki, “Tunneling in a Finite Super lattice,” Appl. Phys. Lett. 22, 562–564 (1973). https://doi.org/10.1063/1.1654509
L.L. Chang, L. Esaki, and R. Tsu, “Resonant tunneling in semiconductor double barriers,” Appl. Phys. Lett. 24, 593–595 (1974). https://doi.org/10.1063/1.1655067
Sh.B. Utamuradova, F.A. Giyasova, K.N. Bakhronov, M.A. Yuldoshev, M.R. Bekchanova, and B. Ismatov. Current Transfer Mechanism in A Thin-Based Heterosystem Based on A2B6 Compounds. East Eur. J. Phys. (2025), (3), 325 https://doi.org/10.26565/2312-4334-2025-3-31
U.K. Mishra, P. Parikh, and Y. Wu, “AlGaN/GaN HEMTs-An overview,” Proc. IEEE, 90, 1022 (2002). https://doi.org/10.1109/JPROC.2002.1021567
F.A. Giyasova, A.Z. Rakhmatov, Kh.N. Bakhronov, M.A. Yuldoshev, F.A. Giyasov, A.N. Olimov, and N.A. Sattarov, “Physical Principles of Photocurrent Generation in a Silicon-Based Photodiode Structure with a Schottky Barrier,” East Eur. J. Phys. (4), 397 (2025). https://doi.org/10.26565/2312-4334-2025-4-38
L.D. Landau, “Diamagnetism of Metals,” Z. Phys. 64, 629–637 (1930). https://doi.org/10.1007/BF01397213
T. Ando, A.B. Fowler, and F. Stern, “Electronic properties of two-dimensional systems,” Rev. Mod. Phys. 54, 437 (1982). https://doi.org/10.1103/RevModPhys.54.437
A.G. Aronov, and G.E. Pikus, “Magnetic field effects on tunneling,” Sov. Phys. Semicond. 10, 698 (1976). https://doi.org/10.1134/1.1184124
C.H. Henry, “Theory of optical absorption,” Phys. Rev. B, 29, 1619 (1984). https://doi.org/10.1103/PhysRevB.29.1619
L.V. Keldysh, “The effect of a strong electric field on the optical properties of semiconductors,” Sov. Phys. JETP, 33, 994 (1961). https://doi.org/10.1016/0038-1098(65)90052-2
Y. Cao, et al., “Highly repeatable room temperature negative differential resistance from GaN/AlN resonant tunneling diodes,” J. Appl. Phys. 120, 094503 (2016). https://doi.org/10.1063/1.4961442
D.A. Ryndyk, Theory of Quantum Transport at Nanoscale, (Springer, 2016). https://doi.org/10.1007/978-3-319-24088-6
E.E. Vdovin, Yu.N. Khanin, O. Makarovsky, Yu.V. Dubrovskii, et.al., “Magnetoanisotropy of electron-correlation-enhanced tunneling through a quantum dot,” Physical Review B, 75(11). (2007). https://doi.org/10.1103/physrevb.75.115315
S. Datta, “Quantum Transport: Atom to Transistor,” (Cambridge University Press, 2005). https://doi.org/10.1017/CBO9780511805772
M.K. Uktamova, and Sh. Mamadaliev, “Three-dimensional modeling of the relationship between static tunneling and the optical absorption coefficient in tunnel diodes,” Results in optics, 22, 100950 (2026). https://doi.org/10.1016/j.rio.2025.100950
M.G. Dadamirzaev, M.K. Uktamova, Sh. Rakhmanova, and G.A. Ibadullayev, “Simulation of tunnel diode I-V Characteristics with photocurrent and phonon-assisted processes,” East Eur. J. Phys. (4), 675-681 (2025). https://periodicals.karazin.ua/eejp/index
M.G. Dadamirzaev, M.K. Uktamova, S.R. Boydedayev, M.A. Yuldoshev, and S.H. Mamadaliev. Theoretical Analysis of Photon-Energy-Controlled Quantum Tunneling Mechanisms Based on the Landauer–Büttiker Formalism. Physics AUC, 35, 76 (2025). https://share.google/EqKveBzVq9UCc2Ndc
S. Suzuki, et al., “Terahertz oscillation of resonant tunneling diodes,” Appl. Phys. Express, 3 064501. (2010). https://doi.org/10.1143/APEX.3.064501
G. Gulyamov, М.G. Dadamirzaev, М.K. Uktamova, and B.Z. Mislidinov, “The effect of a heated electron on the VAX of a tunnel diode,” AIP Conference Proceedings 2700, 050007 (2023).
R. Stratton, “Theory of field emission from semiconductors,” Phys. Rev. 126 pp. 2002–2014. (1962). https://doi.org/10.1103/PhysRev.126.2002
Sh.I. Nabiyev, K. Bozorov, A. Nasritdinov, R. Ikramov, M. Yuldoshev, N. Sattarov, U. Edilboyev, S. Adilkhan, et al., “Study of the Formation of Radiation Defects in Irradiated Silicon Samples, Doped with Chromium Atoms,” East Eur. J. Phys. (1), 228 (2026). https://doi.org/10.26565/2312-4334-2026-1-24
F.A. Giyasova, and M.A. Yuldoshev, “Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon,” Chalcogenide Letters, 22(2), 123–129 (2025). https://doi.org/10.15251/CL.2025.222.123
F.A. Giyasova, K. Bakhronov, M.A. Yuldoshev, M. A., Sapaev, I. B., Ikramov, R. G., Giyasov, F. A., Bekchanova, M. R., et al., “Study of the influence of temperature on the transitions of the CdS/Si/CdTe heterosyste,” East Eur. J. Phys. (4), 461 (2025). https://doi.org/10.26565/2312-4334-2025-4-47
M. Sun, et al., “High-frequency resonant tunneling diodes,” IEEE Trans. Electron Devices, 60, 3077–3083 (2013). https://doi.org/10.1109/TED.2013.2274479
M.S. Paizullakhanov, F.A. Giyasova, Kh.N. Bakhronov, M.A. Yuldoshev, A.A. Mamadaliev, F.A. Giyasov, F.T. Akbarova, et al., “Investigation of the Processes Involved in the Formation of Pyroxene Materials during Solar Melting in a Large Solar Furnace,” Journal of Ovonic Research. 22(1), (2026). https://doi.org/10.15251/JOR.2026.221.51
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