A High-Sensitivity, Zero-Bias Silicon Photodiode for Detection of Eco-Friendly AgInS2 та CuInS2 Quantum Dot Emission
Abstract
Silicon p-n photodiodes optimized for detecting a broad spectrum of photoluminescent radiation from AgInS₂ and CuInS₂ quantum dots have been developed and fabricated. By adjusting fabrication parameters and carefully selecting the substrate material, the sensor’s spectral sensitivity peak (0.34 A/W) aligns with the nanocrystal emission range (550–700 nm). To maximize resolution, we operated the detector in zero-bias mode. This minimized dark current to approximately 6 pA, reduced thermal noise, and enabled high detection sensitivity. It has been experimentally established that, with a load resistance of 10 kΩ, the cutoff frequency of the photodiode is 1 MHz and is entirely limited by the RC time constant of the circuit. This frequency response is sufficient not only for steady-state radiometry of colloids and films with a radiation power of 0.29–0.35 mW, but also for precise study of the microsecond kinetics of quantum dot luminescence decay without risking photodegradation.
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Copyright (c) 2026 Mykola S. Kukurudziak, Vasylyna V. Kopach, Serhii A. Voitovych, Yuriy B. Khalavka, Mykola S. Solodkyi
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