Electronic Transitions and Recombination Mechanisms Cu-Doped CdIn₂S₄ Single Crystals
Abstract
The study investigates the spectral distribution of photoconductivity, optical quenching, transient characteristics, thermally stimulated currents, and the temperature dependence of both dark and photocurrent in Cu-doped CdIn2S4 single crystals. Detailed analysis of the experimental data reveals the presence of deep donor levels with ionization energies located at Ес - 0.17 eV, Ес - 0.66 eV, Ес - 1.2 eV, and Ес - 1.55 eV. At 110 K, optical quenching of the photoconductivity was observed within the photon energy range of 0.86 to 1.63 eV. The energy positions of the photosensitivity centers relative to the valence band maximum were identified, yielding optical ionization energy of Eovr = 0.86 eV and a thermal ionization energy for the r-type levels of Etvr = 0.62 eV. The capture cross-sections ratio for holes and electrons at these r-centers was found to be Spr/Snr = 5×104. Both optical and thermal quenching phenomena are attributed to charge-state transitions and carrier-exchange dynamics between slow (r) and fast (s) recombination centers. The well-defined electronic structure and high photosensitivity of Cu-doped CdIn2S4 single crystals suggest they are promising candidates for advanced photodetector applications in the visible and near-infrared spectral regions.
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