Effect of Stoichiometric Distortions on Electrical and Photoelectric Properties of Layered GeS Crystal
Abstract
The current-voltage characteristic, electrical conductivity, thermally stimulated current, and photoelectric properties of a layered GeS crystal with excess sulfur were investigated under an external electric field of 10-104 V/cm and at temperatures of 100-300 K. It was found that donor-type defects formed as a result of stoichiometric distortion due to excess sulfur in a GeS crystal obtained by the Bridgman method, leading to impurity conductivity. Charge transport occurs by a monopolar injection current limited by the volume of the charge region. It was found that thermal activation of photocurrent and thermal quenching of photocurrent in doped GeS crystals are associated with electron exchange between capture traps and recombination centers.
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