i- ZnO and CdS Buffer Layers for Improving the Efficiency of Copper Tin Sulphide Quantum Dot Sensitized Solar Cells
Abstract
The effect of layer defects as well as interface defects in copper tin sulphide quantum dot sensitized solar cells were investigated using SCAPS-1D software. Layer defects in the sensitizer and hole transporting layer were found to have no effect on the cell efficiency except at very high densities of 1019 cm-2. The interface defect at CTS/ETL was also found to have no effect on the cell efficiency. Defects at the HTL/CTS interface decreased the cell efficiency significantly and so a buffer layer was introduced at this interface. Both i-ZnO and CdS buffer layer materials were found to have energy levels in alignment with the HTL enhancing charge transport. The cell efficiency increased from 17.86% to 18.37% with i-ZnO buffer layer while the cell efficiency rose to 18.61% when CdS was used as the buffer layer. Absorption of the solar spectrum in the blue-green region was enhanced when buffer layers were used in the cell.
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References
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