Effect of Heating of Charge Carriers and Phonons on The Contact Resistance of Rectifying Metal-Semiconductor Structures
Abstract
The dependence of the temperature of charge carriers and phonons on the contact resistance of the Schottky diode is calculated. It is shown that the increase in contact resistance depends on the current passing through the diode, the surface and volume heat transfer coefficients of electrons and phonons, barrier height, the dimensions of the diode, as well as scattering mechanisms, relaxation time of energy and momentum.
Downloads
References
A. Ferrario, S. Battiston, S. Boldrini, T. Sakamoto, E. Miorin, A. Famengo, A. Miozzo, et al., Materials Today: Proceedings, 2(2), 573 (2015). https://doi.org/10.1016/j.matpr.2015.05.078
M. Shtern, M. Rogachev, Y. Shtern, D. Gromov, A. Kozlov, and I. Karavaev, J. Alloys Compd., 852, 156889 (2021). https://doi.org/10.1016/j.jallcom.2020.156889
G. Joshi, D. Mitchell, J. Ruedin, K. Hoover, R. Guzman, M. McAleer, L. Wood, et al., J. Mater. Chem. C, 7(3), 479 (2019). https://doi.org/10.1039/C8TC03147A
N.S. Boltovets, V.V. Kholevchuk, R.V. Konakova, V.F. Mitin, and E.F. Venger. Sensors Actuators A: Physical, 92(1−3), 191 (2001). https://doi.org/10.1016/S0924-4247(01)00562-3
G. Gulyamov, Q. Umarov, A. Soliyev, and B. Shahobiddinov, AIP Conference Proceedings, 2924(1), 050006 (2024). https://doi.org/10.1063/5.0181554
A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, A.O. Vinogradov, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, et al., J. Appl. Phys. 112(6), 063703 (2012). https://doi.org/10.1063/1.4752715
A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, R.V. Konakova, S.A. Vitusevich, S.V. Novitskii, V.N. Sheremet, et al., Techn. Phys. Lett. 42(6), 649 (2016). https://doi.org/10.1134/S1063785016060286
A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, P.N. Brunkov, V.N. Jmerik, S.V. Ivanov, L.M. Kapitanchuk, et al., Semiconductors, 49(4), 461 (2015). https://doi.org/10.1134/S1063782615040193
A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, R.V. Konakova, L.M. Kapitanchuk, V.N. Sheremet, Yu.N. Sveshnikov, et al., Semiconductors, 48(10), 1308 (2014). https://doi.org/10.1134/S106378261410025X
A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, A.O. Vinogradov, V.A. Pilipenko, T.V. Petlitskaya, V.M. Anischik, et al., SPQEO, 17(1), 1 (2014). http://journal-spqeo.org.ua/n1_2014/v17n1-2014-p001-006.pdf
A.V. Sachenko, A.E. Belyaev, and R.V. Konakova, Semiconductors, 50(6), 761 (2016). https://doi.org/10.1134/S106378261606021X
A.V. Sachenko, A.E. Belyaev, and R.V. Konakova, Semiconductors, 52(1), 131 (2018). https://doi.org/10.1134/S1063782618010190
D.K. Schroder, Semiconductor material and device characte-rization, 3ed. (IEEE Press, John Wiley & Sons, Inc. 2006).
G. Gulyamov, A. Gulyamov, A. Ergashev, and B. Abdulazizov, Journal of Modern Physics, 6, 1921 (2015). http://dx.doi.org/10.4236/jmp.2015.613197
G. Gulyamov, B. Shahobiddinov; A. Soliyev; Sh. Nazarov; and B. Mislidinov, AIP Conference Proceedings, 2700(1), 020016 (2023). https://doi.org/10.1063/5.0124940
G. Gulyamov, K.B. Umarov, and A.Z. Soliyev. Romanian Journal of Physics, 68, 613 (2023). https://rjp.nipne.ro/2023_68_5-6/RomJPhys.68.613.pdf
S.M. Sze, and K.Ng. Kwok, Physics of Semiconductor Devices, (John Willey & Sons. Inc., New York, London, 2007).
G. Joshi, D. Mitchell, J. Ruedin, K. Hoover, R. Guzman, M. McAleer, L. Wood, et al., J. Mater. Chem. C, 7(3), 479 (2019). https://doi.org/10.1039/C8TC03147A
T. Sakamoto, Y. Taguchi, T. Kutsuwa, K. Ichimi, S. Kasatani, and M. Inada, J. Electron. Mater. 45(3), 1321 (2016). https://doi.org/10.1007/s11664-015-4022-z
Y. Thimont, Q. Lognone, C. Goupil, F. Gascoin, and E. Guilmeau, J. Electron. Mater. 43(6), 2023 (2014). https://doi.org/10.1007/s11664-013-2940-1
A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, P.N. Brunkov, V.N. Jmerik, S.V. Ivanov, L.M. Kapitanchuk, et al., “Temperature dependences of the contact resistivity in ohmic contacts to n+-InN,” Semiconductors, 49, 461-471 (2015). https://doi.org/10.1134/S1063782615040193
G. Gulyamov, and K.B. Umarov, Semiconductors, 28(4), 409-411 (1994).
Copyright (c) 2024 Gafur Gulyamov, K.B. Umarov, Alisher Z. Soliyev
![Creative Commons License](http://i.creativecommons.org/l/by/4.0/88x31.png)
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).