Study of the Mobility and Electrical Conductivity of Chromium Silicide
Abstract
The temperature dependence of the mobility in chromium silicides in the temperature range of 80 ÷ 780 K was studied. The mobility gradually increases to a temperature of 350 K, then it saturates in the temperature range of 350 ÷ 450K, then gradually decreases. It is shown that the mobility depends on the scatter of charge of carriers on a crystal lattice, impurity ions, dislocations, and silicide inclusions. The frequency of collisions is proportional to T3/2, and the mobility varies with temperature as T-3/2. At high temperatures, phonons may be considered as “frozen” defects and collision frequency with its will proportional to T. The temperature dependences of the electrical conductivity in this temperature range were also studied. Areas with negative and positive temperature coefficients are revealed.
Downloads
References
M.Sh. Isaev, A.G. Gaibov, and A.A. Eshkulov, “Investigation of parameters of Schottky diodes based on chromium silicides,” Journal of Physics: Conference Series, 1679, 022029 (2020). https://doi.org/10.1088/1742-6596/1679/2/022029
Sh.B. Utamuradova, A.V. Stanchik, D.A. Rakhmanov, A.S. Doroshkevich, and K.M. Fayzullaev, New Materials, “X-Ray Structural Analysis of n-Si, Irradiated with Alpha Particles,” Compounds and Applications, 6(3), 214 (2022). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/V6N3/Utamuradova_et_al.pdf
D. Nematov, Kh. Kholmurodov, A. Stanchik, K. Fayzullaev, V. Gnatovskaya, and T. Kudzoev, “On the Optical Properties of the Cu2ZnSn[S1−xSex]4 System in the IR Range,” Trends in Sciences, 20(2), 4058 (2023). https://doi.org/10.48048/tis.2023.4058
S.A. Muzafarova, Sh.B. Utamuradova, A.М. Abdugafurov, K.M. Fayzullaev, E.M. Naurzalieva, and D.A. Rakhmanov, “Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films,” Applied Physics, 4, 81 (2021). https://applphys.orion-ir.ru/appl-21/21-4/PF-21-4-81.pdf (in Russian)
D. Nematov, Kh. Kholmurodov, A. Stanchik, K. Fayzullaev, V. Gnatovskaya, and T. Kudzoev, “A DFT Study of Structure, Electronic and Optical Properties of Se-Doped Kesterite Cu2ZnSnS4(CZTSSe),” Letters in Applied NanoBioScience, 12(3), 67 (2023). https://doi.org/10.33263/LIANBS123.067
A.S. Achilov, R.R. Kabulov, S.B. Utamuradova, and S.A. Muzafarova, “Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the n-CdS/i-CdSxTe1−x/p-CdTe heterostructure,” Modern Physics Letters B, 2350162, (2023). https://doi.org/10.1142/S0217984923501622
B.I. Boltaks, M.K. Bakhadyrkhanov, S.M. Gorodetsky, and G.S. Kulikov, Compensated silicon, (Nauka, Leningrad, 1972). (in Russian)
M. Isaev, A. Gaibov, A. Eshkulov, and P. Saidachmetov, “Formation of Nanosized Films of Chromium Silicides on Silicon Surface,” in: XIV International Scientific Conference “INTERAGROMASH 2021”, (2022), pp. 1031-1041. https://doi.org/10.1007/978-3-030-80946-1_93
M.Sh. Isaev, Sh.G. Norov, and A.D. Mazhidov, “Study of galvanomagnetic properties of the surface layer of diffusion-doped silicon,” Electronic Processing of Materials, 42(6), 80 (2006). https://eom.ifa.md/ru/journal/shortview/848. (in Russian)
N.A. Turgunov, E.Kh. Berkinov, and R.M. Turmanova, “Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si,” in: E3S Web of Conferences, 402, 14018 (2023). https://doi.org/10.1051/e3sconf/202340214018
Sh.B. Utamuradova, Sh.Kh. Daliev, K.M. Fayzullaev, D.A. Rakhmanov, and J.Sh. Zarifbayev, New Materials, Compounds and Applications, 7(1), 37 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/V7N1/Utamuradova_et_al.pdf
Y.Y. Kryuchkov, V.M. Malyutin, V.F. Pichugin, and V.V. Sohoreva, “Development and application of fast ion backscattering spectroscopy methods for analyzing the composition and structure of ion-irradiated dielectric layers,” Bulletin of the Tomsk Polytechnic University. Georesource Engineering, 303(3), 12 (2000). https://cyberleninka.ru/article/n/razrabotka-i-primenenie-metodov-spektroskopii-obratnogo-rasseyaniya-bystryh-ionov-dlya-analiza-sostava-i-struktury-ionno-obluchennyh. (in Russian)
S.B. Utamuradova, A.V. Stanchik, and D.A. Rakhmanov, “X-Ray Structural Investigations Of n-Si Irradiated with Protons,” East European Journal of Physics, 2, 201 (2023). https://doi.org/10.26565/2312-4334-2023-2-21
Sh.B. Utamuradova, A.V. Stanchik, K.M. Fayzullaev, and B.A. Bakirov, “Raman scattering of light by silicon single crystals doped with chromium atoms,” Applied Physics, 2, 33 (2022). https://applphys.orion-ir.ru/appl-22/22-2/PF-22-2-33_RU.pdf (in Russian)
N.A. Turgunov, E.K. Berkinov, and D.K. Mamajonova, “Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure,” Journal of Nano- and Electronic Physics, 13(5), 1 (2021). https://doi.org/10.21272/jnep.13(5).05006
Copyright (c) 2023 Makhmudhodzha Sh. Isaev, Tokhirjon U. Atamirzaev, Mukhammadsodik N. Mamatkulov, Uralboy T. Asatov, Makhmudjon A. Tulametov
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
