Saparov, Fayzulla A., Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan, Uzbekistan

• East European Journal of Physics No. 4 (2023): East European Journal of Physics - Original Papers
  On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures
  Abstract  pdf
• East European Journal of Physics No. 1 (2024): East European Journal of Physics - Original Papers
  Influence of Doping Conditions on the Properties of Nickel Atom Clusters
  Abstract  pdf