Saparov, Fayzulla A., Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan, Uzbekistan
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East European Journal of Physics No. 4 (2023): East European Journal of Physics - Original Papers
On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures
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East European Journal of Physics No. 1 (2024): East European Journal of Physics - Original Papers
Influence of Doping Conditions on the Properties of Nickel Atom Clusters
Abstract pdf