Physical Principles of Photocurrent Generation in a Silicon-Based Photodiode Structure with a Schottky Barrier
Abstract
Homojunction structures of the type Ag–nSi–n⁺Si–(In+Sn) with perfect single-crystal (111) orientation and a high-resistivity compensated layer at the n⁺Si/n-Si interface were obtained using the liquid-phase epitaxy method. The results of investigating photogeneration processes and current transport mechanisms in the silicon Schottky-barrier photodiode structure are presented. A two-barrier model of the structure was developed, according to which current transport has a multifactorial nature and is governed by the combined contributions of thermionic emission, tunneling, and generation–recombination processes. Furthermore, it was established that the photosensitivity of the studied structure covers a photon energy range of 0.387÷1.016 eV, shifted toward the long-wavelength region. The formation of a near-surface high-resistivity layer contributes to an increased response and enables photosensitivity values of up to 0.338 A/W. It was found that reducing the barrier capacitance to 8÷10 pF broadens the frequency range and enhances the speed of response. The Ag–nSi–n⁺Si–(In+Sn) structures are promising for use in photodiodes of optoelectronic devices operating in the visible and infrared spectral regions.
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J. Davila-Rodriguez, X. Xie, J. Zang, C. J. Long, T. M. Fortier, H. Leopardi, T. Nakamura, J. C. Campbell, S.A. Diddams, F. Quinlan, “Optimizing the linearity in high-speed photodiodes,” Instrumentation and Detectors, arXiv.1808.04429, (2018). https://doi.org/10.48550/arXiv.1808.04429
T. Kauten, B. Pressl, T. Kaufmann, and G. Weihs, “Measurement and modeling of the nonlinearity of photovoltaic and Geiger-mode photodiode,” Rev. Sci. Instrum. 85, 063102 (2014). https://doi.org/10.1063/1.4879820
C.A.R. Perini, G. Ferrari, J.-P. Correa-Baena, A. Petrozza and M. Caironi, “A solution processed metal oxide:polymer interlayer improves the perovskite photodetector response speed, dark current, and stability,” The Royal Society of Chemistry’s, EES Solar (2025). https://doi.org/1039/D5EL00043B
Q. Zhao, W. Wang, F. Carrascoso-Plana, W. Jie, and T. Wang, A. Castellanos-Gomez, and R. Frisenda, “The role of traps in the photocurrent generation mechanism in thin InSe photodetectors,” Materials Horizons, 7, 252 (2020). https://doi.org/10.1039/C9MH01020C
Q. Chen, X. Zhang, M.S. Sharawi, and R. Kashya, “Advances in High -Speed, High–Power Photodiodes: From Fundamentals to Applications,” Appl. Sci. 14, 3410 (2024). https://doi.org/10.3390/app14083410
O.A. Abdulkhaev, G.O. Asanova, D.M. Yodgorova, and A.V. Karimov, “Investigation of the photoelectric characteristics of photodiode structures with silicon-based potential barriers,” Journal of Engineering Physics and Thermophysics, 85(3), 709-715 (2012). https://doi.org/10.1007/s10891-012-0705-y
M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives,” Sensors, 10, 10571-10600 (2010). https://doi.org/10.3390/s101210571
O. Surucu, D.E. Yıldız, and M. Yıldırım, “A study on the dark and illuminated operation of Al/Si3N4/p Si Schottky photodiodes: optoelectronic insights,” Applied Physics A, 130, 103 (2024). https://doi.org/10.1007/s00339-024-07284-2
S. Khudaverdyan, A. Vaseashta, G. Ayvazyan, L. Matevosya, A. Khudaverdyan, M. Khachatryan, and E. Makaryan, “On the Selective Spectral Sensitivity of Oppositely Placed Double-Barrier Structures,” Photonics, 9, 558 (2022). https://doi.org/10.3390/photonics9080558
X. Guan, et al., “Recent progress in short- to long-wave infrared photodetection using 2D materials and heterostructures,” Advanced Optical Materials, 9(4), 1-24 (2021). https://doi.org/10.1002/adom.202001708
A. Bablich, et al., “Few-Layer MoS2/a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection,” ACS Photonics, 6, 1372-1378 (2019). https://doi.org/10.48550/arXiv.1907.09592
V.S. Varavin, S.A. Dvoretskii, N.N. Mikhailov, V.G. Remesnik, I.V. Sabinina, Yu.G. Sidorov, V.A. Shvets, et al., “Molecular Beam Epitaxy of CdHgTe: Current State and Horizons,” Optoelectronics, Instrumentation and Data Processing, 56(5), 456-469 (2021). https://doi.org/10.3103/S8756699020050143
I. Izhnin, A. Izhnin, H. Savytskyy, O. Fitsych, N. Mikhailov, V. Varavin, S. Dvoretsky, et al., “Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates,” Opto-electronics review, 20(4), 375-378 (2012). https://doi.org/10.2478/s11772-012-0048-4
M. Wittmer, “Carrier recombination and high barrier Schottky diodes on silicon,” Solids and Materials, 51, 451–454 (1990). https://doi.org/10.1007/BF00324725
M Wittmer, and J.L. Freeouf, “Ideal Schottky diodes on passivated silicon,” Phys. Rev. Lett. 69(18), 2701-2704 (1992). https://doi.org/10.1103/PhysRevLett.69.2701
T. Saito, “Spectral Properties of Semiconductor Photodiodes,” in: Advances in Photodiodes, edited by G.-F.D. Betta, (IntechOpen, London, 2011), pp. 1-24. https://doi.org/10.5772/15300
P. Pipinys, A. Pipiniene, and A. Rimeika, “Phonon-assisted tunneling in reverse biased Schottky diodes,” J. Appl. Phys. 86, 6875 6878 (1999). https://doi.org/10.1063/1.371766
Z. Li, X. Jin, C. Yuan, and K. Wang, “Photon Detector Technology for Laser Ranging: A Review of Recent Developments,” Coatings, 15, 798 (2025). https://doi.org/10.3390/coatings15070798
D. Ma, Y. Wang, and Y. Wang, “Performance enhancement of fiber-optic ultraviolet photodetector based on Ag/ZnO-microrod Schottky junction,” in: Proc. SPIE 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications, (NDTA 2022), vol. 126175D, (2023). https://doi.org/10.1117/12.2666501
Y.-F. Xiong, J.-H. Chen, Y.-Q. Lu, and F. Xu, “Optical-Fiber-Compatible Photodetector Based on a Graphene-MoS2-WS2 Heterostructure with a Synergetic Photogenerating Mechanism,” Advanced-Electronic-Materials, 5(1), 1800562 (2018). https://doi.org/10.1002/aelm.201800562
S. Rakhmanov, K. Matchonov, H. Yusupov, K. Nasriddinov, and D. Matrasulov, “Optical high harmonic generation in Dirac materials,” Eur. Phys. J. B, 98, 35 (2025). https://doi.org/10.1140/epjb/s10051-025-00885-7
M. Wang, et al., “Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping,” Adv. Optical Mater. 9, 2101798 (2021). https://doi.org/10.1002/adom.202101798
Y. Jin, J. Seok, and K. Yu, “Highly Efficient Silicon-Based Thin-Film Schottky Barrier Photodetectors,” ACS Photonics, 10(5), 1-2 (2023). https://doi.org/10.1021/acsphotonics.2c01923
A. Pelella, A. Grillo, E. Faella, G. Luongo, M.B. Askari, and A. Di Bartolomeo, “Graphene–Silicon Device for Visible and Infrared Photodetection,” ACS Appl. Mater. 13, 47895-47903 (2021). https://doi.org/10.1021/acsami.1c12050
R. Aly, R. Tarek, O. Ramadan, and M. Khashan, “An Overview on Schottky Barrier Diodes,” Faculty of Engineering-Alexandria University, 1-10 (2025). https://www.researchgate.net/publication/366763152
B. Zhang, D. Ji, Y. Min, Y. Fan, and X. Chen, “A High-Efficiency 220 GHz Doubler Based on the Planar Schottky Varactor Diode,” J. Electron. Mater. 48, 3603–3611 (2019). https://doi.org/10.1007/s11664-019-07067-z
M. Alathbah, “Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mm Wave and THz Applications,” Micromachines, 14(2), 2-18 (2023). https://doi.org/10.3390/mi14010002
C.-C. Hsieh, Y.-F. Chang, Y.-C. Chen, H.-L. Chang, and S.K. Banerjee, “Highly Non linear and Reliable Amorphous Silicon Based Back to Back Schottky Diode as Selector Device for RRAM Arrays,” ECS Journal of Solid State Science and Technology, 6(9), 143-147 (2017). https://doi.org/10.1149/2.0041709jss
H. Chouaib, M. Aouassa, and M. Bouabdellaoui, “Highly photosensitive MIS structure with embedded silicon film for solar cell and photodetection applications,” Journal of Materials Science: Materials in Electronics, 34, 1815 (2023). https://doi.org/10.1007/s10854-023-11171-6
F.A. Giyasova, “Development of Multilayer Photosensitive Structures Based on GaAs and Si for Optoelectronic Devices,” D.Sci. thesis, Institute of Semiconductor Physics and Microelectronics, Uzbekistan (2024).
A. Grillo, and A. Di Bartolomeo, “A Current-Voltage Model for Double Schottky Barrier Devices,” Advanced Electronic Materials, 7, 2000979 (2021). https://doi.org/10.1002/aelm.202000979
N.N. Kononov, and S.G. Dorofeev, “Characteristics of the Schottky barriers of two-terminal thin-film Al/nano-Si film/ITO structures,” Semiconductors, 51, 608–616 (2017). https://doi.org/10.1134/S106378261705013X
Sh. B. Utamuradova, F.A. Giyasova, M.S. Paizullakhanov, S.Yu. Gerasimenko, M.A. Yuldoshev, S.R. Boydedayev, and M.R. Bekchanova, “Investigation of the functional capability of modified silicon-based photodiodes structure,” Chalcogenide Letters. 22(8), 753-764 (2025). https://doi.org/10.15251/CL.2025.228.753
A.G. Milnes, and D.L. Feucht, “Heterojunctions and Metal-Semiconductor Junctions,” (Elsevier Science Imprint, 2012).
V. Kumar, R. Singh, and P.K. Basu, “Current transport mechanisms in metal–semiconductor contacts,” J. Appl. Phys. 110(2), 024502-1–024502-7 (2011).
R. Singh, and S. Kumar, “Trap-assisted space-charge-limited conduction in semiconductor structures,” Solid-State Electronics, 45(4), 625-630 (2001).
S.M. Sze, and K.K. Ng, Physics of Semiconductor Devices, 3rd ed, (Wiley, Hoboken, NJ, USA, 2007).
J.R. Yusupov, M. Ehrhardt, Kh.Sh. Matyokubov, and D.U. Matrasulov, “Driven transparent quantum graphs,” Physica Scripta, 100(7), (2025). https://doi.org/10.1088/1402-4896/ade014
A.V. Karimov, and D.M. Yodgorova, “Determination of characteristics of double-barrier photodiode structures with metal-semiconductor junctions,” Technology and design in electronic equipment, (5), 27-30 (2005). (in Ukrainian)
D.M. Yodgorova, A.V. Karimov, F.A. Giyasova, R.A. Saidova, A.A. Yakubov, “Spectral photosensitivity m-n -n of structure on a basis epitaxy of layers,” Semiconductor Physics Quantum Electronics Optoelectronics, 11(1), 26-28 (2008). https://doi.org/10.15407/spqeo11.01.026
E.V. Kunitsyna, I.A. Andreev, G.G. Konovalov, E.V. Ivanov, A.A. Pivovarova, N.D. Il’inskaya, and Yu.P. Yakovlev, “GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range,” Semiconductors, 52, 1215-1220 (2018). https://doi.org/10.1134/S1063782618090099
Sh.B. Utamuradova, F.A. Giyasova, K.N. Bakhronov, M.A. Yuldoshev, M.R. Bekchanova, B. Ismatov. Current Transfer Mechanism in A Thin-Based Heterosystem Based on A2B6 Compounds. East Eur. J. Phys. (2025), 3, 325. https://doi.org/10.26565/2312-4334-2025-3-31
D.M. Yodgorova, and F.A. Giyasova, “Photoelectric characteristics of silicon n+-nSi-Ag structure,” International Conference “Fundamental and Applied Issues of Physics”. Section II: Physics of Semiconductors and Solids, Their Applied Aspects, 13-14, 137-139 (2017).
M.A. Yuldoshev, Z.T. Azamatov, A.B. Bakhromov, M.R. Bekchanova, East Eur. J. Phys. (4), 250 (2024), https://doi.org/10.26565/2312-4334-2024-4-25
M. Akramov, B. Eshchanov, S. Usanov, Sh. Norbekov, and D. Matrasulov, “Second-harmonic generation in branched optical waveguides: Metric graphs based approach,” Physics Letters A, 524, 129827 (2024), doi.org/10.1016/j.physleta.2024.129827
F.A. Giyasova, and M.A. Yuldoshev, “Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon,” Chalcogenide Letters, 22(2), 123–129 (2025). https://doi.org/10.15251/CL.2025.222.123
A.S. Saidov, Sh.N. Usmonov, M.U. Kalanov, A.N. Kurmantayev, and A.N. Bahtybayev, “Structural and Some Electrophysical Properties of the Solid Solutions Si1–xSnx (0≤x≤0.04),” Phys. Solid State, 55, 45-53 (2013). https://doi.org/10.1134/S1063783413010290
A.V. Karimov, D.M. Yodgorova, F.A. Giyasova, E.M. Shpilevskiy, and N.I. Usmanova, “Photovoltaic Effect in Au-nSi-Au Structures with Schottky Barriers and Features of Spectral Characteristics,” Applied Solar Energy, 54(5), 330-332 (2018). https://doi.org/10.3103/S0003701X18050109
A.S. Saidov, Sh.N. Usmonov, M. Kalanov, and Kh.M. Madaminov, “Structure and Photoelectric Properties of Si1–xSnx Epilayers,” Tech. Phys. Lett. 36, 827–829 (2010). https://doi.org/10.1134/S1063785010090154
Copyright (c) 2025 Feruza A. Giyasova, Akhmad Z. Rakhmatov, Khayot N. Bakhronov, Murodjon A. Yuldoshev, Farkhod A. Giyasov, Abdurauf N. Olimov, Nosirbek A. Sattarov
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