Study of the Influence of Temperature on the Transitions of the CdS/Si/CdTe Heterosystem
Abstract
The study presents the results of an investigation into the temperature dependence of the current–voltage characteristics of CdS/Si/CdTe heterostructures fabricated by thermal evaporation. The study establishes that, as the temperature increases, an exponential rise in current is observed, attributed to the thermally activated nature of conductivity and the reduction of the potential barrier at the interfacial boundaries. In the low-temperature region, the structure exhibits diode-like behavior, whereas at higher applied voltages (20–40 V), an injection transport mechanism becomes dominant. The activation energy of 0.61 eV confirms that the thermal release of carriers from localized states governs charge transport. The results indicate the stability of the barrier height and conduction mechanism over the studied temperature range, highlighting the need to account for thermal effects in the design of photoelectric and optoelectronic devices based on CdS/Si/CdTe structures.
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