Modeling the Temperature and Magnetic Field Dependence of the Band Gap in Narrow-Zone Quantum Well Semiconductors
Abstract
The fundamental physical parameter of both bulk and low-dimensional semiconductor structures is the band gap (E3dg, E2dg), whose energetic width allows the prediction of the operational parameters of semiconductor-based devices in advance. Therefore, the determination of E3dg and E2dg (in cases where the band gap of newly synthesized materials is not known) is considered one of the primary tasks in semiconductor heterostructure technology. Furthermore, another important feature of Eg is its strong sensitivity to external influences. Indeed, variations in Eg resulting from such effects can fundamentally alter the physical and chemical properties of semiconductor devices.
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