Influence of Deformation on Quantum Oscillations in Low-Dimensional Semiconductor
Abstract
In this article, the effect of deformation on the Landau levels of electrons and holes in quantum semiconductors is considered. The effect of deformation on the temperature dependence of quantum oscillation effects in small-sized semiconductors obeying the quadratic dispersion law has been applied. Also, the dependence of the surface density of states on temperature and magnetic field for semiconductor heterostructure materials is theoretically explained. A new analytical expression is proposed to calculate the effect of a magnetic field on the surface density of states at the semiconductor-dielectric interface. A mathematical model is developed to determine the effect of a strong magnetic field on the temperature dependence of the surface density of states in semiconductor heterostructures. As a result, the separation of continuous energy spectra measured at room temperature under the influence of a strong magnetic field into discrete levels at low temperatures is explained on the basis of the proposed model.
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