Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures
Abstract
This article elucidates the dependence of the ideality factor on both internal functional parameters and external factors in semiconductors at low temperatures. We have explored the influence of external factors such as temperature and external source voltage. Through numerical modeling and theoretical analysis, we thoroughly investigate the dependencies of semiconductor material internal functional parameters—including doping concentration, the bandgap of semiconductors, the lifetime of charge carriers, and geometric dimensions ranging from micrometers to nanometers— the ideality factor on p-n and p-i-n junction structures. Our analysis spans cryogenic temperatures from 50 K to 300 K, with intervals of 50 K. To conduct this study, we have focused on p-n and p-i-n junction structures fabricated from Si and GaAs. The selected model features geometric dimensions of a=10 μm, b=8 μm, and c=6 μm. The thickness of the i-layer ranged from 10 µm to 100 µm in 10- µm increments. Increasing the thickness of the i-layer results in a corresponding rise in the ideality factor.
Downloads
References
S.M. Sze, and K.K. Ng, Physics of Semiconductor Devices, third edition, (John Wiley & Sons, Inc., 2007).
E. Gnani, A. Gnudi, S. Reggiani, and G. Baccarani, IEEE Trans. Electron Devices, 58(9), 2903 (2011). https://doi.org/10.1109/TED.2011.2159608
Z. Arefinia, A. Asgari, Solar Energy Materials and Solar Cells, 137, 146 (2015). https://doi.org/10.1016/j.solmat.2015.01.032
O.V. Pylypova, A.A. Evtukh, P.V. Parfenyuk, I.I. Ivanov, I.M. Korobchuk, O.O. Havryliuk, and O.Yu. Semchuk, Opto-Electronics Review, 27(2), 143 (2019). https://doi.org/10.1016/j.opelre.2019.05.003
R. Ragi, R.V.T. da Nobrega, U.R. Duarte, and M.A. Romero, IEEE Trans. Nanotechnol. 15(4), 627 (2016). https://doi.org/10.1109/TNANO.2016.2567323
R.D. Trevisoli, R.T. Doria, M. de Souza, S. Das, I. Ferain, and M.A. Pavanello, IEEE Trans. Electron Devices, 59(12), 3510 (2012). https://doi.org/10.1109/TED.2012.2219055
N.D. Akhavan, I. Ferain, P. Razavi, R. Yu, and J.-P. Colinge, Appl. Phys. Lett. 98(10), 103510 (2011). https://doi.org/10.1063/1.3559625
A.V. Babichev, H. Zhang, P. Lavenus, F.H. Julien, A.Y. Egorov, Y.T. Lin, and M. Tchernycheva, Applied Physics Letters, 103(20), 201103 (2013). https://doi.org/10.1063/1.4829756
D.H.K. Murthy, T. Xu, W.H. Chen, A.J. Houtepen, T.J. Savenije, L.D.A. Siebbeles, et al., Nanotechnology, 22(31), 315710 (2011). https://doi.org/10.1088/0957-4484/22/31/315710
B. Pal, K.J. Sarkar, and P. Banerji, Solar Energy Materials and Solar Cells, 204, 110217 (2020). https://doi.org/10.1016/j.solmat.2019.110217
J.Sh. Abdullayev, I.B. Sapaev, Eurasian Physical Technical Journal, 21(3), 21–28 (2024). https://doi.org/10.31489/2024No3/21-28
P. Dubey, B. Kaushik, and E. Simoen, IET Circuits, IET Circuits, Devices & Systems, (2019). https://doi.org/10.1049/iet-cds.2018.5169
M.-D. Ko, T. Rim, K. Kim, M. Meyyappan, and C.-K. Baek, Scientific Reports, 5(1), 11646 (2015). https://doi.org/10.1038/srep11646
A.M. de Souza, D.R. Celino, R. Ragi, and M.A. Romero, Microelectronics J. 119, 105324 (2021). https://doi.org/10.1016/j.mejo.2021.105324
M.C. Putnam, S.W. Boettcher, M.D. Kelzenberg, D.B. Turner-Evans, J.M. Spurgeon, E.L. Warren, et al., Energy & Environmental Science, 3(8), 1037 (2010). https://doi.org/10.1039/C0EE00014K
Abdullayev, J. S., & Sapaev, I. B. (2024). East European Journal of Physics, (3), 344-349. https://doi.org/10.26565/2312-4334-2024-3-39R
Elbersen, R.M. Tiggelaar, A. Milbrat, G. Mul, H. Gardeniers, and J. Huskens, Advanced Energy Materials, 5(6), 1401745 (2014). https://doi.org/10.1002/aenm.201401745
Copyright (c) 2024 Jo‘shqin Sh. Abdullayev, Ibrokhim B. Sapaev
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
