Photoelectric Characteristics of the Heterojunction n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y
Abstract
The photoelectric properties of n-GaAs – p-(GaAs)1–x–y(Ge2)x(ZnSe)y heterostructures have been investigated both in photodiode and photovoltaic modes. It has been revealed that the spectral dependence of the photocurrent covers a wide range of energy intervals, ranging from 1.07 eV to 3 eV. It has been demonstrated that as the temperature of the crystallization onset (Toc) increases, the peaks of the spectral dependencies of the photoelectromotive force (photo-EMF) shift towards shorter wavelengths. It has been observed that as the crystallization onset temperature (Toc) of the solid solution layer (GaAs)1–x–y(Ge2)x(ZnSe)y increases, the lifetime of photo carriers increases from 10-7 s at Toc=650°C to 5·10-5 s at Toc=730°C. It is demonstrated that the peaks of the intrinsic photoluminescence band shift towards shorter wavelengths with an increase in the temperature of the crystallization onset. Additionally, the study of the intrinsic spectral region of photoluminescence in samples across the thickness of the epitaxial layer confirms the variability of the obtained structures.
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