Electrodifusion of Manganese Atoms in Silicon

  • Xalmurat M. Iliyev Tashkent State Technical University, Tashkent, Uzbekistan https://orcid.org/0000-0002-2742-0190
  • Zafar B. Khudoynazarov Tashkent State Technical University, Tashkent, Uzbekistan
  • Bobir O. Isakov Tashkent State Technical University, Tashkent, Uzbekistan https://orcid.org/0000-0002-6072-3695
  • Mirahmat X. Madjitov Tashkent State Technical University, Tashkent, Uzbekistan
  • Abduvokhid A. Ganiyev Tashkent State Technical University, Tashkent, Uzbekistan
Keywords: Resistivity, Silicon, Impurity atoms, Diffusion, Mobility of charge carriers, Concentration of charge carriers, Electrically induced diffusion


The paper describes the research and study of the process of electrically induced diffusion of Mn atoms in silicon directly from a Si surface layer that was preliminarily enriched with Mn. To ensure the so-called electrically induced diffusion process, a constant electric field was applied to the investigated samples. It has been revealed that as a result of the diffusion of Mn impurity atoms into samples placed at the negative pole of the electrical diffusion unit, the proportion of Mn atoms was 75.4% (relative to silicon atoms), while in samples placed at the positive pole this indicator tended to be 2.7% (relative to silicon atoms). Besides that, for the first time, an experimental increase in the electro-active concentration of Mn impurity atoms in silicon (at T = 900°C) was detected under the influence of an external constant-value electric field. In this case, the maximum solubility of impurity atoms of Mn at a temperature of 900°C was NMn~2.27·1014 cm-3, while the average concentration of electro-active Mn atoms diffused into silicon under the influence of an external constant electric field reached NMn*~2.62·1014 cm-3.


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How to Cite
Iliyev, X. M., Khudoynazarov, Z. B., Isakov, B. O., Madjitov, M. X., & Ganiyev, A. A. (2024). Electrodifusion of Manganese Atoms in Silicon. East European Journal of Physics, (2), 384-387. https://doi.org/10.26565/2312-4334-2024-2-48

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