SCAPS Numerical Analysis of Graphene Oxide/Zirconium Disulfide Solar Cells
Abstract
This work studies the performance of solar cells composed of two different materials, graphene oxide (Go, hole transport material) and zirconium disulfide (ZrS2, electron transport materials) using the SCPAS -1D simulation. It has been found that Go/ZrS2 solar cells show better performance with high short circuit current, Jsc, of 38 mA/cm2 and the power conversion efficiency, η, of 17% compared with other solar cells based on graphene oxide and perovskite materials. Additionally, the short circuit current density decreases from 38 mA/cm2 to 22 mA/cm2 when the energy gap of ZrS2 increases from 1.2 eV to 17 eV. The increasing the operating temperature and the work function of back contact also led to decrease the open circuit voltage and power conversion efficiency of the cells, while the short circuit current density was slightly enhanced. That is attributed to changes in the electrical properties of Go and ZrS2 layers, including their charge carrier mobility and characteristics of the interfacial layers.
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