Electrical and Photoelectric Properties of Heterojunctions MoOx/n-Cd1-xZnxTe

Keywords: heterojunction, molybdenum oxide, Cd1-хZnхTe, impedance, surface states

Abstract

The paper presents the results of studies of the optical and electrical properties of МоOx/n-Cd1-хZnхTe semiconductor heterojunctions made by depositing MoOx films on a pre-polished surface of n-Cd1-хZnхTe plates (5 × 5 × 0.7 mm3) in a universal vacuum installation Leybold - Heraeus L560 using reactive magnetron sputtering of a pure Mo target. Such studies are of great importance for the further development of highly efficient devices based on heterojunctions for electronics and optoelectronics. The fabricated МоOx/n‑Cd1‑хZnхTe heterojunctions have a large potential barrier height at room temperature (φ0 = 1.15  eV), which significantly exceeds the analogous parameter for the МоOx/n-CdTe heterojunction (φ0 = 0.85 eV). The temperature coefficient of the change in the height of the potential barrier was experimentally determined to be d(φ0)/dT = -8.7·10-3 eV K, this parameter is four times greater than the temperature coefficient of change in the height of the potential barrier for MoOx/n-CdTe heterostructures. The greater value of the potential barrier height of the МоOx/n-Cd1-хZnхTe heterojunction is due to the formation of an electric dipole at the heterointerface due to an increase in the concentration of surface states in comparison with MoOx/n-CdTe heterostructures, and this is obviously associated with the presence of zinc atoms in the space charge region and at the metallurgical boundary section of the heteroboundary. In МоOx/n‑Cd1-хZnхTe heterojunctions, the dominant mechanisms of current transfer are generation-recombination and tunneling-recombination with the participation of surface states, tunneling with forward bias, and tunneling with reverse bias. It was found that МоOx/n-Cd1-хZnхTe heterojunctions, which have the following photoelectric parameters: open circuit voltage Voc = 0.3 V, short circuit current Isc = 1.2 mA/cm2, and fill factor FF = 0.33 at an illumination intensity of 80 mW/cm2 are promising for the manufacture of detectors of various types of radiation. The measured and investigated impedance of the МоOx/n-Cd1-хZnхTe heterojunction at various reverse biases, which made it possible to determine the distribution of the density of surface states and the characteristic time of their charge-exchange, which decrease with increasing reverse bias.

Downloads

Download data is not yet available.

References

K. Zanio, Semiconductors and semimetals. (Academic Press, 1978).

R. Singh, R. Sivakumar, S.K. Srivastava, and T. Som, Applied Surface Science, 507, 144958 (2020), https://doi.org/10.1016/j.apsusc.2019.144958.

Y. Sun, C.J. Takacs, S.R. Cowan, J.H. Seo, X. Gong, A. Roy, and A.J. Heeger, Advanced materials, 23(19), 2226-2230 (2011), https://doi.org/10.1002/adma.201100038.

C. Gretener, J. Perrenoud, L. Kranz, C. Baechler, S. Yoon, Y.E. Romanyuk, S. Buecheler, and A.N. Tiwari, Thin Solid Films, 535, 193-197 (2013), https://doi.org/10.1016/j.tsf.2012.11.110.

C. Battaglia, S.M. De Nicolas, S.De Wolf, X. Yin, M. Zheng, C. Ballif, and A. Javey, Applied Physics Letters, 104(11), 113902 (2014), https://doi.org/10.1063/1.4868880.

Zh.I. Alferov, Semiconductors, 32, 1-14 (1998), https://doi.org/10.1134/1.1187350.

V.V. Brus, Solar Energy, 86, 786-791 (2012), https://doi.org/10.1016/j.solener.2011.12.009.

H.A. Mohamed, Journal of applied Physics, 113(9), 093105 (2013), https://doi.org/10.1063/1.4794201.

E. Barsoukov, and J.R. Macdonald (Eds.). Impedance spectroscopy: theory, experiment, and applications. (John Wiley & Sons, 2018).

J. Chen, and N.G. Park, Advanced Materials, 31(47), 1803019 (2019), https://doi.org/10.1002/adma.201803019.

M.N. Solovan, V.V. Brus, P.D. Maryanchuk, M.I. Ilashchuk, and Z.D. Kovalyuk, Semicond. Sci. Technol. 30, 075006 (2015), https://doi.org/10.1088/0268-1242/30/7/075006.

L.N. Skvortsova, V.N. Batalova, K.A. Bolgaru, I.A. Artyukh, and A.A. Reger, Russian Journal of Applied Chemistry, 92(1), 159 165 (2019), https://doi.org/10.1134/S10704272190100221.

P.M. Gorley, Z.M. Grushka, V.P. Makhniy, O.G. Grushka, O.A. Chervinsky, P.P. Horley, Yu.V. Vorobiev, and J. Gonzalez Hernandez, Phys. Stat. Sol. (C), 5, 3622-3625 (2008), https://doi.org/10.1002/pssc.200780149.

V.V. Brus, M.I. Ilashchuk, Z.D. Kovalyuk, P.D. Maryanchuk, K.S. Ulyanytsky, Semicond. Sci. Technol. 26, 125006 (2011), https://doi.org/10.1088/0268-1242/26/12/125006.

E.H. Nicollian, and A. Goetzberger, Bell System Tech. J. 46, 1055-1133 (1967), https://doi.org/10.1002/j.1538-7305.1967.tb01727.x.

V.V. Brus, Semicond. Sci. Technol. 27, 035024 (2012), https://doi.org/10.1088/0268-1242/27/3/035024.

M.P. Hughes, K.D. Rosenthal, N.A. Ran, M. Seifrid, G.C. Bazan, and T.Q. Nguyen, Advanced Functional Materials, 28(32), 1801542 (2018), https://doi.org/10.1002/adfm.201801542.

M.M. Shehata, and K. Abdelhady, Applied Physics A, 124(9), 591 (2018), https://doi.org/10.1007/s00339-018-2006-6.

V.V. Brus, Semicond. Sci. Technol. 28, 025013 (2013), https://doi.org/10.1088/0268-1242/28/2/025013.

T. Kamas, V. Giurgiutiu, and B. Lin, Smart Materials and Structures, 24(11), 115040 (2015), https://doi.org/10.1088/0964-1726/24/11/115040.

Published
2021-02-17
Cited
0 article
How to Cite
Solovan, M., Mostovyi, A., Parkhomenko, H., Brus, V., & Maryanchuk, P. (2021). Electrical and Photoelectric Properties of Heterojunctions MoOx/n-Cd1-xZnxTe. East European Journal of Physics, (1), 34-42. https://doi.org/10.26565/2312-4334-2021-1-05

Most read articles by the same author(s)