@article{Solovan_Mostovyi_Parkhomenko_Brus_Maryanchuk_2021, title={Electrical and Photoelectric Properties of Heterojunctions MoOx/n-Cd1-xZnxTe}, url={https://periodicals.karazin.ua/eejp/article/view/16461}, DOI={10.26565/2312-4334-2021-1-05}, abstractNote={<p>The paper presents the results of studies of the optical and electrical properties of МоO<sub>x</sub>/n-Cd<sub>1-х</sub>Zn<sub>х</sub>Te semiconductor heterojunctions made by depositing MoO<sub>x</sub> films on a pre-polished surface of n-Cd<sub>1-х</sub>Zn<sub>х</sub>Te plates (5 × 5 × 0.7 mm<sup>3</sup>) in a universal vacuum installation Leybold - Heraeus L560 using reactive magnetron sputtering of a pure Mo target. Such studies are of great importance for the further development of highly efficient devices based on heterojunctions for electronics and optoelectronics. The fabricated МоO<sub>x</sub>/n‑Cd<sub>1‑х</sub>Zn<sub>х</sub>Te heterojunctions have a large potential barrier height at room temperature (φ<sub>0 </sub>= 1.15 &nbsp;eV), which significantly exceeds the analogous parameter for the МоO<sub>x</sub>/n-CdTe heterojunction (φ<sub>0</sub> = 0.85 eV). The temperature coefficient of the change in the height of the potential barrier was experimentally determined to be <em>d(φ<sub>0</sub>)/dT</em> = -8.7·10<sup>-3</sup> eV K, this parameter is four times greater than the temperature coefficient of change in the height of the potential barrier for MoO<sub>x</sub>/n-CdTe heterostructures. The greater value of the potential barrier height of the МоO<sub>x</sub>/n-Cd<sub>1-х</sub>Zn<sub>х</sub>Te heterojunction is due to the formation of an electric dipole at the heterointerface due to an increase in the concentration of surface states in comparison with MoO<sub>x</sub>/n-CdTe heterostructures, and this is obviously associated with the presence of zinc atoms in the space charge region and at the metallurgical boundary section of the heteroboundary. In МоO<sub>x</sub>/n‑Cd<sub>1-х</sub>Zn<sub>х</sub>Te heterojunctions, the dominant mechanisms of current transfer are generation-recombination and tunneling-recombination with the participation of surface states, tunneling with forward bias, and tunneling with reverse bias. It was found that МоO<sub>x</sub>/n-Cd<sub>1-х</sub>Zn<sub>х</sub>Te heterojunctions, which have the following photoelectric parameters: open circuit voltage V<sub>oc</sub> = 0.3 V, short circuit current I<sub>sc</sub> = 1.2 mA/cm<sup>2</sup>, and fill factor FF = 0.33 at an illumination intensity of 80 mW/cm<sup>2</sup> are promising for the manufacture of detectors of various types of radiation. The measured and investigated impedance of the МоO<sub>x</sub>/n-Cd<sub>1-х</sub>Zn<sub>х</sub>Te heterojunction at various reverse biases, which made it possible to determine the distribution of the density of surface states and the characteristic time of their charge-exchange, which decrease with increasing reverse bias.</p&gt;}, number={1}, journal={East European Journal of Physics}, author={Solovan, Mykhailo M. and Mostovyi, Andrii I. and Parkhomenko, Hryhorii P. and Brus, Viktor V. and Maryanchuk, Pavlo D.}, year={2021}, month={Feb.}, pages={34-42} }