Features of the application of X-ray photoelectron spectroscopy to determine the thickness of ultrathin films

  • А. Н. Стервоедов Scientific Physics and Technology Center MON and NAS of Ukraine
  • В. М. Береснев V.N. Karazin Kharkiv National University
  • Н. В. Сергеева V.N. Karazin Kharkiv National University
Keywords: X-ray photoelectron spectroscopy (XPS); ultra-thin film thickness measurement; titanium nitride

Abstract

In the current paper, the example of measuring the parameters of ultrathin (3 – 5 nm) TiNx films demonstrates the possibility of using X-ray photoelectron spectroscopy (XPS) for determination the thickness and continuity of the films of nanoscale thickness. TiNx films were obtained on silicon by the low-current ion-beam sputtering of titanium target in a nitrogen atmosphere. The advantages of XPS method in comparison with other common methods of solid surface analysis are shown. The method of measuring the thickness of ultrathin films by XPS was described in details.

Downloads

Download data is not yet available.

Author Biographies

А. Н. Стервоедов, Scientific Physics and Technology Center MON and NAS of Ukraine

Scientist, PhD

В. М. Береснев, V.N. Karazin Kharkiv National University

Prof., DSc

Н. В. Сергеева, V.N. Karazin Kharkiv National University

Scientist

References

Dietl T. Nitrides as spintronic materials//Physical Status Solid B. – 2003. – Vol. 240. – P. 433-439.

Chambers S.A., Yoo Y.K. New materials for spintronics// MRS Bulletinю.–2003.–Vol. 28.– P. 706.

Gregg J.F., Petej I., Jouguelet E., Dennis C. Spin electronics – a review//J. Phys. D: Appl. Phys. – 2002. – Vol. 35. – P. 121-125.

Busch Brett W., Pluchery O., Chabal Y.I., Muller D.A., Opila R.L., Kwo J.R., Garfunkel E. Materials characterization of alternative gate dielectrics// Mrs bulletin. – 2002. – P. 206-211.

Wilk G.D., Wallace R.M., Anthony J.M. High-k gate dielectrics: Current status and materials properties considerations//J. Appl. Phys. – 2001. – Vol. 89, No. 10. – P. 5243-5275.

Стогний А.И., Метод контроля наноразмерной толщины бислойных пленочных наноструктур // Письма в ЖТФ. – 2003. – Т. 29, Вып. 4. – С. 39–45.

Стогний А.И., Новицкий Н.Н., Стукалов О.М. Ионно-лучевое полирование наноразмерного рельефа поверхности оптических материалов//Письма в ЖТФ. – 2002. – Т. 28, Вып. 1. – С. 39-48.

Shallenberger J.R. et al. Oxide Thickness Determination by XPS, AES, SIMS, RBS and TEM // Proceedings of International Conference on Ion Implantation Technology. – 1998. – Vol. 1. – P. 79- 82.

Styervoyedov A., Farenik V. Formation of Ti and TiN ultra-thin films on Si by ion beam sputter deposition//Surface Science. – 2006. – Vol. 600. – P. 3766-3769.

Деревянко А., Стервоедов А., Силкин М. Стабилизация процесса ионно-лучевого осаждения наноразмерных пленок нитридов и оксинитридов металлов//Физическая инженерия поверхности. – 2008. – Т. 6, № 1-2. – С. 114-120.

Mohai M., Bertуti I. Calculation of Overlayer Thickness on Curved Surfaces Based on XPS Intensities//Surf. Interface Analysis. – 2004. – Vol. 36. – P. 805-808.

Tanuma S., Powell C.J., Penn D.R. Proposed formula for electron inelastic mean free paths based on calculations for 31 materials//Surface science letter. – 1987. – Vol. 192. – P. L849-L857.
Published
2019-07-26
How to Cite
Стервоедов, А. Н., Береснев, В. М., & Сергеева, Н. В. (2019). Features of the application of X-ray photoelectron spectroscopy to determine the thickness of ultrathin films. Journal of Surface Physics and Engineering, 8(1), 88-92. Retrieved from https://periodicals.karazin.ua/pse/article/view/13455