The influence of neutron irradiation on the processes of modulation in base region of silicon p+nn+-structure

Abstract

The results of research of the influence of neutron irradiation on the dependence of the capacitance on the reverse voltage of silicon p+nn+-structure are given. Under the influence of neutron irradiation dose of 3·1015 n/cm2 is found the expansion of initial thickness of the p+n-junction’s space charge – two and a half times, which is explained with formation of i-layer near the border of p+n-junction. While achieving a given electric field strength after exposure achieved with twice higher voltages. As a result is reduced the capacitance of the structure and turn-on time of the transient voltage suppressor.