Wavelet analysis of composition microinhomogeneities of  Cd1-xZnxTe crystals grown from melt

O. N. Chugai N.E. Zhukovsky Kharkiv National Aerospace University, Chkalova str., 17, Kharkiv, 61070, Ukraine
S. L. Abashin N.E. Zhukovsky Kharkiv National Aerospace University, Chkalova str., 17, Kharkiv, 61070, Ukraine
A. V. Gaidachuk N.E. Zhukovsky Kharkiv National Aerospace University, Chkalova str., 17, Kharkiv, 61070, Ukraine
D. P. Zherebyatiev N.E. Zhukovsky Kharkiv National Aerospace University, Chkalova str., 17, Kharkiv, 61070, Ukraine
I. V. Lunyov N.E. Zhukovsky Kharkiv National Aerospace University, Chkalova str., 17, Kharkiv, 61070, Ukraine
A. A. Poluboiarov Institute for Single Crystals of NAS of Ukraine, Lenin Ave., 60, Kharkiv, 61001, Ukraine
S. V. Sulima Institute for Single Crystals of NAS of Ukraine, Lenin Ave., 60, Kharkiv, 61001, Ukraine

Keywords: AIIBVI crystals, dielectric permittivity, semiconductors solid solutions, composition inhomogeneities, wavelet analysis

Abstract

Linear dependencies of composition of Cd_1-xZn_xTe (x = 0.03 - 0.15) crystals grown from melt were measured along direction of its growth. Wavelet analysis shows that in these dependences for Zn mole fraction corresponding to different sections there are several harmonic components with spatial period about units – tens micrometers. Anisotropy of low-frequency dielectric properties on crystals where specified direction is physically marked out was revealed. Peculiarities of crystal composition and properties are explained with self-oscillating processes at their growth.

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