The galvanomagnetic properties of two-dimensional conducting systems formed by nanocrystallites CrSi2 in the plane (111) of Si single crystals with a different type of conductivity
Keywords:
chromium disilicide, epitaxial silicon, the temperature dependence of the resistance
Abstract
The temperature dependences (in a range of 20 – 300 K) of the resistance, magnetoresistance (up to 5 T) and Hall electromotive force of silicon samples in which the chromium disilicide CrSi2 nanocrystallites were arranged in plane (111) have been studied. Two samples which were prepared on silicon substrates with hole and electron conductivities were investigated. The transport properties of these systems are explained within the interhollow hopping band conductivity model. At T >50 K conductivity at the systems substantially depends on the characteristics of silicon.
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Published
2016-12-28
How to Cite
Berkutov, I. B., Andrievskii, V. V., Mirzoiev, I. G., Komnik, Y. F., Galkin, N. G., & Goroshko, D. L. (2016). The galvanomagnetic properties of two-dimensional conducting systems formed by nanocrystallites CrSi2 in the plane (111) of Si single crystals with a different type of conductivity. Journal of V. N. Karazin Kharkiv National University. Series Physics, (23), 110-116. Retrieved from https://periodicals.karazin.ua/physics/article/view/7787
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