Polarization Effects in Si-n-p Radiation Receivers
Abstract
This paper presents a comprehensive analysis of n-p junction currents and polarization effects in diffusion Si detectors (receivers) for radiation. The mechanisms of polarization induced by charge-carrier capture at localized centers and the formation of space charge in the detector's sensitive region are investigated. The relationship between the presence of "large-scale" traps, which are local clusters of impurity atoms, and the appearance of anomalous spectral characteristics in the form of doublets has been established. It has been experimentally shown that ultrasonic treatment of Si-n-p detectors leads to a significant reduction in polarization effects due to the redistribution of impurity atoms and smoothing of the potential relief in the semiconductor structure. A physical model is proposed to explain the mechanism by which ultrasonic influence affects the electrophysical and spectrometric characteristics of silicon detectors. The results obtained have practical significance for optimizing production technology and improving the operational parameters of Si‑n-p radiation detectors.
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References
L. Pan, I.R. Pandey, Z. Liu, John A. Peters, D.Y. Chung, C. Hansson; B.W. Wessels, et al. “Study of perovskite CsPbBr₃ detector polarization and its mitigation with ultrahigh X-ray flux,” J. Appl. Phys. 133(19), 194502 (2023). https://doi.org/10.1063/5.0151902
P.G. Kasherininov, “Optical recording media based on semiconductor M(TI)S structures with a tunnel-thin dielectric (TI)” Doc. dissertations. St. Petersburg Physicotechnical Institute of the Russian Academy of Sciences, 2011.
K. Ridzonova, E. Belas, R. Grill, J. Pekárek, and P. Praus, “Space‐Charge‐Limited Photocurrents and Transient Currents in CdZnTe Radiation Detectors,” Phys. Rev. Applied, 13(6), 064054 (2020). https://doi.org/10.1103/PhysRevApplied.13.064054
V.K. Eremin, and E.M. Verbitskaya, “Silicon detectors of relativistic particles in modern high-energy physics,” in: "SILICON-2012", (St. Petersburg, 2012). pp. 50.
S.S. Ostapenko, N.E. Korsunskaya, and M.K. Sheinkman, “Ultrasound Stimulated Defect Reactions in Semiconductors,” Solid State Phenomena, 85–86, 317–336 (2001). https://doi.org/10.4028/www.scientific.net/SSP.85-86.317
K.I. Vakhobov, “Acoustostimulated diffusion of gold atoms in silic,” JournalNX — A Multidisciplinary Peer Reviewed Journal, 8(11), 375–380 (2022). https://doi.org/10.17605/OSF.IO/H69YD
A. Saymbetov, R. Muminov, J. Zhang, et al. “Equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector,” Scientific Reports, 13, 12525 (2023). https://doi.org/10.1038/s41598-023-39710-5
S.A. Radzhapov, B.S. Radzhapov, and R.Kh. Rakhimov, “Features of the technology for manufacturing silicon surface-barrier detectors with a large sensitive working area for measuring the activity of natural isotopes,” Computational Nanotechnology, 1, 151-154 (2018).
B.N. Zaveryukhin, E.B. Zaveryukhina, R.A. Muminov, et al. “Drift of Li atoms in p-Si stimulated by USW,” in: Conf. “Fundamental and applied issues of physics”, dedicated. 60 years old. Academy of Sciences and Physicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, November 27-28, (Tashkent, 2003).
J. Zhang, and N. Japashov, “Investigation and optimisation of a lithium drift silicon detector using Si–Li structure and bidirectional diffusion and drift techniques,” Reviews in Inorganic Chemistry, 44(1), 65–72 (2024). https://doi.org/10.1515/revic-2023-0034
H. Kim, C.S. Park, and S.J. Yu, “Generalized Electron Emission Theory for One Dimensional Conducting Materials,” Applied Sciences (MDPI), 14(7), (2024). https://doi.org/10.3390/app14072993
M. Kozai, H. Fuke, et al. “Statistical investigation of the large area Si(Li) detectors mass produced for the GAPS experiment,” arXiv:2111.06100 [physics.ins-det (2021). https://doi.org/10.48550/arXiv.2111.06100
R.M. Zedric, C.M. Marianno, S.S. Chirayath, Y. Diawara, and I. Darby, “The Effect of Radiation Damage on the Charge Collection Efficiency of Silicon Avalanche Photodiodes,” IEEE Transactions on Nuclear Science, 69(2), 152–159 (2022). https://doi.org/10.1109/TNS.2021.3137476
A.G. Gaibov, K.I. Vakhobov, B.V. Ibragimova, U.E. Zhuraev, and D.T. Rasulova, “Influence of ultrasonic waves on current-voltage characteristics and polarization effects of si-n-p radiation receivers.” Materials Science Forum, 1049, 317-324 (2022). https://doi.org/10.4028/www.scientific.net/MSF.1049.317
Copyright (c) 2025 Abdumalik G. Gaibov, Kudbiddin I. Vakhabov, Marguba S. Mirkomilova, Utkir E. Djuraev
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