Structural Characteristics and Optical Properties of SiC Thin Films Produced by the RF-PVD Method
Abstract
We studied the silicon carbide semiconductor compound, which is widely used as the most characteristic material in the preparation of semiconductors. In the radio frequency (RF) mode of the magnetron sputtering device, 300-400 nm thick SiC thin films were formed in an Ar environment as a reactive gas in a vacuum of 10-4 Torr. In the radio frequency mode, a power of 240 W with a frequency of 100 kHz and D=70% were used. The maximum sputtering speed of the magnetron was 50 Ǻ/s. A circular silicon carbide (SiC) target with a diameter of 76.2 mm and a compound content of (99.9%) was used. X-ray analysis of the obtained films was performed on an XRD-6100 device and the Miller indices were determined. In addition, the optical parameters of the thin films were determined. FTIR spectroscopic analysis showed a relative decrease in the transmission spectrum in the far-IR region from 13.1% to 8.9% with increasing SiC film thickness in the range of 480-400 cm-1. Characteristic peaks associated with Si-C and C≡C vibrations were also detected. A characteristic Si-C stretching absorption was observed at a wave number of 780 cm-1, where the IR absorption was 88.7%. At a wave number of 2180 cm-1, it corresponds to a triple covalent bond of C≡C. The results showed that the optical and electrical properties of SiC films can be easily tuned by changing the Si and C concentrations in the coating for the same film thickness.
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References
D. Shan, D. Sun, M. Wang, and Y. Cao, “Investigation of the Electronic Properties of Silicon Carbide Films with Varied Si/C Ratios Annealed at Different Temperatures,” Crystals, 14(1), 45 (2024). https://doi.org/10.3390/cryst14010045
Z.D. Sha, X.M. Wu, and L.J. Zhuge, “Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique,” Vacuum, 79(3-4), 250-254 (2005). https://doi.org/10.1016/j.vacuum.2005.04.003
A. Valovič, J. Huran, M. Kučera, A.P. Kobzev, and Š. Gaži, “Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology,” European Physical Journal: Applied Physics, EDP Sciences, 56(2), 24013 (2011). https://doi.org/10.1051/epjap/2011110153
T. Tavsanoglu, E.O. Zayim, O. Agirseven, and S. Yildirim, “Optical, electrical and microstructural properties of SiC thin films deposited by reactive DC magnetron sputtering,” Thin Solid Films, 674, 1-6 (2019). https://doi.org/10.1016/j.tsf.2019.01.047
M.Sh. Sardar, M.N. Husin, G. Mohyuddin, F. Ashraf, M. Cancan, M. Alaeiyan, and M.R. Farahan, “Computation of Sombor Indices for Some Classes of Silicon Carbides,” Mathematical Statistician and Engineering Applications, 71(3s3), 81-97 (2022). https://doi.org/10.17762/msea.v71i3s3.350
A. Qamar, A. Mahmood, T. Sarwar, and N. Ahmed, “Synthesis and characterization of porous crystalline SiC thin films prepared by radio frequency reactive magnetron sputtering technique,” Applied Surface Science, 257(15), 6923-6927 (2011). https://doi.org/10.1016/j.apsusc.2011.03.033
R. Gerhardt, Properties and Applications of Silicon Carbide, (InTech, 2011).
V. Sulyaeva, A. Kolodin, M. Khomyakov, A. Kozhevnikov, and M. Kosinova, “Enhanced Wettability, Hardness, and Tunable Optical Properties of SiCxNy Coatings Formed by Reactive Magnetron Sputtering,” Materials, 16(4), 1467 (2023). https://doi.org/10.3390/ma16041467
K.T. Dovranov, M.T. Normuradov, K.T. Davranov, and I.R. Bekpulatov, “Formation of Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) thin films and evaluation of their optically direct and indirect band gaps,” Ukrainian Journal of Physics, 69(1), 20–25 (2024). https://doi.org/10.15407/ujpe69.1.20
I.R. Bekpulatov, G.T. Imanova, S.H. Jabarov, B.E. Umirzakov, K.T. Dovranov, V.V. Loboda, I.X. Turapov, et al., “The solid‑phase ion‑plasma method and thermoelectric properties of thin CrSi2 films,” J. Mater. Sci: Mater. Electron. 35, 1426 (2024). https://doi.org/10.1007/s10854-024-13163-6
M.T. Normuradov, Sh.T. Khozhiev, K.T. Dovranov, Kh.T. Davranov, M.A. Davlatov, and F.K. Khollokov, “Development of a technology for the production of nano-sized heterostructured films by ion-plasma deposition,” Structure of materials, Ukr. J. Phys. 68(3), 210-215 (2023). https://doi.org/10.15407/ujpe68.3.210
Kh.T. Davranov, M.T. Normuradov, M.A. Davlatov, K.T. Dovranov, T.U. Toshev, and N.A. Kurbonov, “Preparation of calcium titanate perovskite compound, optical and structural properties,” East Eur. J. Phys. (3), 350-354 (2024). https://doi.org/10.26565/2312-4334-2024-3-40
T. Tavsanoglu, E. Baskurt, and O. Yucel, “Optical and Tribological Properties of Silicon Carbide Thin Films Grown by Reactive DC Magnetron Sputtering,” Key Engineering Materials, 484, 145-151 (2011). https://doi.org/10.4028/www.scientific.net/KEM.484.145
M. Fraga, M. Massi, and H. Masiel, “Nitrogen doping of SiC thin films deposited by RF magnetron sputtering,” Journal of Materials Science: Materials in Electronics, 19(8-9), 835-840 (2008). https://doi.org/10.1007/s10854-007-9487-y
A. Taylor, and D.S. Laidler, “The Formation and Crystal Structure of Silicon Carbide,” British Journal of Applied Physics, 1(7), 174 (2002). https://doi.org/10.1088/0508-3443/1/7/303
K.M. Pitman, A.M. Hofmeister, A.B. Corman, and A.K. Speck, “Optical properties of silicon carbide for astrophysical applications,” Astronomy & Astrophysics, 483, 661–672 (2008). https://doi.org/10.1051/0004-6361:20078468
Electrochimica Acta 48 (2002) 341
/347
P. Bruzzonia, R.M. Carranzaa, J.R. Collet Lacostea, and E.A. Crespo, “Kramers Kronig transforms calculation with a fast convolution algorithm,” Electrochimica Acta, 48, 341-347 (2002). https://doi.org/10.1016/S0013-4686(02)00677-1
N.G. Marley, J.S. Gaffney, J.C. Baird, C.A. Blazer, P.J. Drayton, and J.E. Frederick, “An Empirical Method for the Determination of the Complex Refractive Index of Size-Fractionated Atmospheric Aerosols for Radiative Transfer Calculations,” Aerosol Science and Technology, 34, 535-549 (2001). https://doi.org/10.1080/027868201750296322
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