Diffusion Distribution of Cr and Mn Impurity Atoms in Silicon
Abstract
This work presents theoretical calculations of the diffusion coefficient, solubility, and diffusion distribution of Mn and Cr impurity atoms in silicon. The results of theoretical studies showed that the distribution of Cr element atoms in silicon is slightly different from the distribution of Mn element atoms in silicon, while the remaining physical and chemical properties are almost identical. Also, if a Mn atom is placed at a node in a silicon single crystal, it will have three charge states: neutral – Mn0, one electron lost – Mn+1, and two electrons lost – Mn+2. Similarly, if a Cr atom is placed at the node of a silicon single crystal, it will have four different charge states: neutral – Cr0, one electron lost – Cr+1, two electrons lost – Cr+2, and three electrons lost – Cr+3. Therefore, it is relevant to study the properties of doped silicon with Cr impurity atoms.
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Kh.M. Iliev, S.V. Koveshnikov, B.O. Isakov, E.Zh. Kosbergenov, G.A. Kushiev, and Z.B. Khudoynazarov. “The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms.” Surface Engineering and Applied Electrochemistry, 60(4), 633–639. (2024). https://doi.org/10.3103/S106837552470025X
Kh.M. Iliev, N.F. Zikrillaev, K.S. Ayupov, B.O. Isakov, B.A. Abdurakhmanov, Z.N. Umarkhodjaeva, and L.I. Isamiddinova, “Effect of GaSb Compound on Silicon Bandgap Energy,” Journal of nano- and electronic physics, 16(2), 02004(4pp) (2024). https://doi.org/10.21272/jnep.16(2).02004
N.F. Zikrillayev, S.B. Isamov, B.O. Isakov, T. Wumaier, Li wen Liang, J.X. Zhan, and T. Xiayimulati, “New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V,” Journal of nano- and electronic physics, 15(6), 06024 (2023). https://doi.org/10.21272/jnep.15(6).06024
N.F. Zikrillaev, M.K. Khakkulov, and B.O. Isakov, “The Mechanism of the formation of binary compounds between Zn and S impurity atoms in Si crystal lattice,” East Eur. J. Phys. (4), 177-181 (2023). https://doi.org/10.26565/2312-4334-2023-4-20
M.K. Bakhadirkhanov, Z.T. Kenzhaev, Kh.S. Turekeev, B.О. Isakov, and A.A. Usmonov, “Gettering properties of nickel in silicon photocells,” Technical Physics, 67(14), (2022). https://doi.org/10.21883/TP.2022.14.55221.99-21
G.A. Kushiev, B.O. Isakov, and U.X. Mukhammadjonov, “The Prospects of Obtaining a New Material with a Hetero-Baric Structure GexSi1–x-Si Based on Silicon for Photo Energy Applications,” Journal of nano- and electronic physics, 16(3), 03003 (2024). https://doi.org/10.21272/jnep.16(3).03003
X.M. Iliyev, V.B. Odzhaev, S.B. Isamov, B.O. Isakov, B.K. Ismaylov, K.S. Ayupov, Sh.I. Hamrokulov, and S.O. Khasanbaeva, “X-ray diffraction and Raman spectroscopy analyses of GaSb-enriched Si surface formed by applying diffusion doping technique,” East Eur. J. Phys. (3), 363-369 (2023). https://doi.org/10.26565/2312-4334-2023-3-38
X.M. Iliyev, S.B. Isamov, B.O. Isakov, U.X. Qurbonova, and S.A. Abduraxmonov, “A Surface study of Si doped simultaneously with Ga and Sb,” East Eur. J. Phys. (3), 303-307 (2023). https://doi.org/10.26565/2312-4334-2023-3-29
N.F. Zikrillaev, G.A. Kushiev, S.B. Isamov, B.A. Abdurakhmanov, and O.B. Tursunov, “Photovoltaic Properties of Silicon Doped with Manganese and Germanium”, Journal of nano- and electronic physics, 15(1), 01021 (2023). https://doi.org/10.21272/jnep.15(1).01021
M.O. Tursunov, Kh.M. Iliev, and B.K. Ismaylov, “High-temperature analysis of silicon properties with manganese-oxygen binary complexes,” Physical Sciences and Technology, 11(1-2), 4-12 (2024). https://doi.org/10.26577/phst2024v11i1a1
X.M. Iliyev, Z.B. Khudoynazarov, B.O. Isakov, M.X. Madjitov, and A.A. Ganiyev, “Electrodifusion of manganese atoms in silicon,” East Eur. J. Phys. (2), 384-387 (2024). https://doi.org/10.26565/2312-4334-2024-2-48
M. Alawein, and H. Fariborzi, “Circuit Models for Spintronic Devices Subject to Electric and Magnetic Fields,” Journal on Exploratory Solid-State Computational Devices and Circuits, 4(2), (2018). https://doi.org/10.1109/JXCDC.2018.2876456
I. Zutic, J. Fabian, and S.D. Sarma, “Spintronics: Fundamentals and applications,” Reviews of Modern Physics, 76, (2004). https://doi.org/10.1103/RevModPhys.76.323
B. Behin-Aein, A. Sarkar, S. Srinivasan, and S. Datta, “Switching energydelay of all spin logic devices,” Appl. Phys. Lett. 98(12), 123510-1–123510-3 (2011). https://doi.org/10.1063/1.3567772
I.V. Krauklis, O.Yu. Podkopaeva, and Yu.V. Chizhov, “DFT Modeling of Mn Charged States in Ga1–xMnxAs Diluted Ferromagnetic Semiconductors: the Cluster Approach,” Semiconductors, 48(8), 1010–1016 (2014). https://doi.org/10.1134/S1063782614080168
M. Takahashi, “Carrier States in Ferromagnetic Semiconductors and Diluted Magnetic Semiconductors—Coherent Potential Approach,” Materials, 3, 3740-3776 (2010). https://doi.org/10.3390/ma3063740
Glitzky and W. Merz, and K.H. Homann, “Single dopant diusion in semiconductor technology,” Math. Meth. Appl. Sci. 27, 133 154 (2004). https://doi.org/10.1002/mma.447
M.K. Bakhadyrkhanov, Kh.M. Iliev, S.A. Tachilin, S.S. Nasriddinov, and B.A. Abdurakhmanov, “Impurity Photovoltaic Effect in Silicon with Multicharge Mn Clusters,” Applied Solar Energy, 44(2), 132–134 (2008). https://doi.org/10.3103/S0003701X08020151
M.K. Bakhadirkhanov, S.B. Isamov, N.F. Zikrillaev, Kh.M. Iliev, G.Kh. Mavlonov, S.V. Koveshnikov and Sh.N. Ibodullaev, “Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms”, Surface Engineering and Applied Electrochemistry, Vol. 56, No. 6, pp. 734–739. (2020). https://doi.org/10.3103/S1068375520060046
M.K. Bakhadirkhanov, Sh.I. Askarov and N. Norkulov, “Some Features of Chemical Interaction between a Fast Diffusing Impurity and a Group VI Element in Silicon,”, Phys. Stat. Sol. (a), 142, 339 (1994). https://doi.org/10.1002/PSSA.2211420206
Y. Ezer, J. Harkonen, S. Arpiainen, V. Sokolov, P. Kuivalainen, J. Saarilahti, and J. Kaitila, “Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structurem”, Physica Scriptam T79, 228È231 (1999). https://doi.org/10.1016/S0025-5408(98)00117-2
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