Mechanism of Current Performance in Thin-Film Heterojunctions n-CdS/p-Sb2Se3 Obtained by the CMBD Method
Abstract
In this work, we analyzed the temperature dependence of the current-voltage characteristics of the structure of glass/Mo/p-Sb2Se3/n-CdS/In. From an analysis of the temperature dependences of the direct branches of the I-V characteristic of the heterojunction, it was established that the dominant mechanism of current transfer at low biases (3kT/e<V<0.8V) is multi-stage tunneling-recombination processes involving surface states at the Sb2Se3/CdS interface. At V>0.8 V, the dominant current transfer mechanism is Newman tunneling. In the case of reverse bias (3kT/e<V<1.0 eV), the main mechanism of charge carrier transfer through a heterojunction is tunneling through a potential barrier involving a deep energy level. At higher reverse voltages, a soft breakdown occurs.
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