Study of CIGS Pseudo-Homojunction Thin Film Solar Cell using SCAPS-1D

  • Samah Boudour Research Center in Industrial Technologies CRTI, Algiers, Algeria https://orcid.org/0000-0002-4277-6945
  • Idris Bouchama Electronic Department, Faculty of Technology, University of M'sila, Alegria; Research Unite on Emerging Materials (RUEM), University Ferhat Abbas, Setif, Algeria
  • Samiha Laidoudi Université Mohamed El Bachir El Ibrahimi de Bordj Bou Arréridj El-Anasser, Algérie https://orcid.org/0000-0002-3566-9359
  • Walid Bedjaoui Research Center in Industrial Technologies CRTI, Cheraga, Algiers, Algeria; Department of Mechanical Engineering, University of Biskra, Biskra, Algeria
  • Leila Lamiri Research Center in Industrial Technologies CRTI, Cheraga, Algiers, Algeria
  • Ouafia Belgherbi Research Center in Industrial Technologies CRTI, Cheraga, Algiers, Algeria
  • Siham Aziez Centre de Recherche Scientifique et Technique en analyse physico-chimique CRAPC, Tipaza, Algerie
DOI: https://doi.org/10.26565/2312-4334-2022-4-14
Keywords: CIGS, ODC, Pseudo-homojunction, J-V characteristics, Scaps-1D

Abstract

The present modelling study reports the performance of defected CIGS pseudo-homojunction thin film solar cell (P-HTFSC) and determines its optimum parameters for high performance using the Scaps-1D software under the AM1.5 illumination and the operating temperature of 300 K. To focus the discussion on the optimal parameters (thickness, doping concentrations, deep/interface defect concentrations and bandgap) for the ZnO, CdS, ODC and CIGS thin film layers, cross sectional (1D) simulations have been performed on the ZnO/CdS/ODC/CIGS P-HTFSC device for obtaining its optimal structure that confers high light-into-electricity conversion efficiency. The four light J-V characteristics (short-circuit current: JSC, open-circuit voltage: VOC, fill factor: FF and conversion efficiency: ) have been used as indicators to evaluate the device performances. Simulation outcomes have proved that for a best performance for CIGS P-HTFSC device, the optimal thickness for CIGS and ODC layers should be small than 2 µm and few nm, respectively, while the optimal defect concentration within the layer should be 1013 cm-3 and between 1013 cm-3-1018 cm-3, respectively.

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Published
2022-12-06
Cited
How to Cite
Boudour, S., Bouchama, I., Laidoudi, S., Bedjaoui, W., Lamiri, L., Belgherbi, O., & Aziez, S. (2022). Study of CIGS Pseudo-Homojunction Thin Film Solar Cell using SCAPS-1D. East European Journal of Physics, (4), 145-152. https://doi.org/10.26565/2312-4334-2022-4-14
Issue
No. 4 (2022): East European Journal of Physics
Section
Original Papers

Copyright (c) 2022 Samah Boudour, Idris Bouchama, Samiha Laidoudi, Walid Bedjaoui, Leila Lamiri, Ouafia Belgherbi, Siham Aziez

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