Thermoelectric Coefficients Of Heavily Doped N-Type Silicon
Abstract
In this study the thermoelectric effect is investigated in terms of thermoelectric power, Figure of merit(ZT), and power factor. The calculations were carried out based on Boltzmann transport equation by taking ionized impurity scattering as a dominant mechanism for heavily doped n-type silicon at 300K with charge concentration varies from 2×1018 /cm3 – 20×1020 /cm3. It is known that doping of materials can induce Fermi level shifts and doping can also induce changes of the transport mechanisms. The result of this study shows doping also induces changes in thermoelectric power, Figure of merit, and power factor. The magnitude of the change is different for consideration of parabolic density of states and non-parabolic modified density of states which amounts to 16.7% for thermoelectric power, from 0.059% - 84.1% for Figure of merit(ZT) in favor of non-parabolic consideration respectively. There is also a difference of 39.9% for power factor with respect to relaxation time between the two cases in favor of the parabolic consideration.
Downloads
References
E.O. Kane, Phys. Rev. 131, 79 (1963), https://doi.org/10.1103/PhysRev.131.79.
J.W. Slotboom, Solid-state Electron. 20, 279 (1977), https://doi.org/10.1016/0038-1101(77)90108-3
C.J. Hwang, “Calculation of Fermi energy and band tail parameters in heavily doped and degenerate n-type GaAs”, J. Appl. Phys. 41, 2268-2674, (1970).
M.H. Gebru, “Electrical and thermal conductivity of heavily doped n-type silicon”, Eur. Phys. J. Appl. Phys. 90, 10102 (2020), https://doi.org/10.1051/epjap/2020190332
C. Kittel, Introduction to solid state physics, (John Wiley & Sons, Inc., New York, 1996).
Cantarero A., Àlvarez F.X. in: Thermoelectric Effects: Semiclassical and Quantum Approaches from the Boltzmann Transport Equation, (Springer International Publishing, Switzerland, 2014), pp. 1-39, https://doi.org/10.1007/978-3-319-02012-9_1
W.A. Harrison, Solid State Theory, (McGram-Hill Book Company, Inc. New York, 1976).
F. Seiltz, The Modern Theory of Solids, (McGram-Hill book Company. Inc. New York, 1940).
D.M. Rowe, Thermoelectrics handbook: Macro-to-Nano, (Taylor & Fracis Group, New York, 2006).
H.W. Cong, American journal of modern physics, 4 (2018), https://doi.org/10.11648/j.ajmp.20180704.13
Wolfram Research, Inc., Mathematica 5.0. 2008.
Y. Ohishi, J. Xie, Y. Miyazaki, Y. Aikebaier, H. Muta, K. Kurosaki, S. Yamanaka, N. Uchida, and T. Tada, “Thermoelectric properties of heavily boron and phosphorus-doped silicon, Jpn. J. Appl. Phys. 54, 071301 (2015). https://doi.org/10.7567/JJAP.54.071301
T. Claudio, G. Schierning, R. Theissmann, H. Wiggers, H. Schober, M.M. Koza, and R.P. Hermann, J. Mater. Sci. 48, 2836 (2013), https://doi.org/10.1007/s10853-012-6827-y
Copyright (c) 2021 Mulugeta Habte Gebru
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
- Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
- Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this journal.
- Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).
