Cluster-Induced Ferromagnetism in Manganese-Doped Silicon
Abstract
The integration of magnetic functionality into silicon remains a key challenge for the development of spintronic devices. In this work, we investigate the structural, electrical, and magnetic properties of Mn-diffused silicon fabricated via a two-step thermal diffusion process that enables controlled incorporation and redistribution of Mn within the Si matrix. Magnetic measurements reveal clear ferromagnetic behavior at room temperature, characterized by a well-defined hysteresis loop with finite coercivity and remanent magnetization. The temperature dependence of magnetization indicates a Curie temperature of approximately 360 K, confirming the stability of magnetic ordering above room temperature. Electrical transport measurements show a systematic evolution of carrier properties with increasing diffusion temperature, including a transition from p-type to n-type conductivity. This behavior is attributed to the activation of Mn-related donor states and defect complexes leading to compensation and overcompensation of boron acceptors. A strong correlation between carrier concentration and magnetic properties is observed, indicating the crucial role of free carriers in mediating magnetic interactions. Based on the combined experimental results, the observed ferromagnetism is attributed to a cluster-induced mechanism, in which Mn-rich regions act as localized magnetic centers coupled via carrier-mediated exchange interactions, consistent with an RKKY-type mechanism. These findings demonstrate that two-step thermal diffusion provides an effective route to tune both the electrical and magnetic properties of silicon, highlighting its potential for silicon-based spintronic applications.
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Copyright (c) 2026 Olmas E. Sattarov, Stanislav A. Tachilin, Ilxomov A. Ilyosbek, Nematillo N. Mamatkulov, Alisher R. Toshev
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