Electron States in a Five-Layer Semiconductor Structure. Part 1
Abstract
Transcendental equations have been obtained to determine the electron energy spectrum in a five-layer semiconductor structure with an energy dip at its center for various energy ranges. It is shown that the presence of this dip leads to an increase in the energy gaps calculated within first-order perturbation theory. It is pointed out that the origin of the energy-level shift is associated with the dependence of the electron Hamiltonian not only on the potential-energy operator but also on the kinetic-energy operator, which depends on the effective masses in each layer of the structure. As has been shown, the modification of the potential profile of a simple well due to the dip should result in a lowering of the level, whereas the difference in kinetic energies for promotes an upward shift of the levels, where is the effective electron mass in the -th layer.
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