Electron States in Five-Layer Semiconductor Structures. Part 2
Abstract
Transcendental equations for determining the electron energy spectrum in a five-layer semiconductor structure with a potential barrier located at its center have been derived and analyzed for different energy ranges. It is shown that the origin of the energy-level shift is associated with the dependence of the electron Hamiltonian not only on the potential energy but also on the kinetic energy, which is governed by the effective masses of electrons in each layer of the structure. Changes in the electron energy spectrum of a five-layer semiconductor structure whose layers have different values of physical quantities characterizing the band and geometrical parameters of the sample as a function of temperature have been analyzed.
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