Structural Features of Epitaxial Solid Solution Films (Si2)1-X(GaN)X Grown on Si Substrates
Abstract
On Si (111) substrates with a diameter of 20 mm, continuous monocrystalline epitaxial layers of (Si2)1-x(GaN)x solid solutions were grown by liquid-phase epitaxy from a limited volume of a tin solution-melt. The grown films had n-type conductivity. An analysis of the X-ray diffraction pattern showed that the grown epitaxial film has (111) crystallographic orientation with evident single-crystal sings. The size of the film subcrystallites is ̴ 40 nm. Due to the replacement of paired Si atoms by a molecule consisting of Ga and N atoms, a slight bending of the film towards the perpendicular to the reflecting surface was observed. Coherently arranged nanocrystals of cubic (c - GaN) and hexagonal (h - GaN) modification of gallium nitride with a crystallite size of LGaN≈47 nm are formed in the crystal lattice of the epitaxial film.
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References
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Copyright (c) 2026 A.S. Saidov, Sh.N. Usmonov, T.T. Ishniyazov, M.U. Kalanov, D.V. Saparov, M.В. Tagaev, A.M. Akhmedov, A.Sh. Razzokov, K.G. Gaymnazarov
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