Theoretical Analysis of Interband Single-Photon Light Absorption in Semiconductors: Effects of Valence-Conduction Band Mixing and Temperature-Dependent Bandgap
Abstract
This study presents a theoretical analysis of the spectral and temperature dependence of the single-photon absorption coefficient for linearly and circularly polarized light in semiconductors with diamond and zinc blende lattice structures. Optical transitions involving subbands of light and heavy holes and the conduction band are examined, incorporating effects such as temperature-dependent bandgap, valence-conduction band state mixing, and coherent saturation. The findings indicate that heavy holes contribute approximately 10 times more than light holes to single-photon absorption. Furthermore, the relationship between linear-circular dichroism and light intensity is explored, emphasizing the role of coherent saturation effects.
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References
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