Dangerous Bonds Individual of Hydrogenated Amorphous Silicon and Defect Absorption Spectra

  • Rustamjon G. Ikramov Namangan Engineering and Technology Institute, Namangan, Uzbekistan https://orcid.org/0000-0003-1629-1300
  • Khurshidbek A. Muminov Namangan Engineering and Technology Institute, Namangan, Uzbekistan https://orcid.org/0000-0001-6547-2592
  • Mashkhura A. Nuritdinova Namangan Engineering and Technology Institute, Namangan, Uzbekistan
  • Bobur Q. Sutonov Namangan Engineering and Technology Institute, Namangan, Uzbekistan
  • Oybek T. Kholmirzayev Namangan Engineering and Technology Institute, Namangan, Uzbekistan
  • A’zamxo’ja A. Mamakhanov Namangan Engineering and Technology Institute, Namangan, Uzbekistan
Keywords: Amorphous semiconductors, Optical transitions of electrons with the participation of defects, Defect absorption spectra, Partial spectra

Abstract

In this work, defect absorption spectra for defects characteristic of hydrogenated amorphous silicon are theoretically studied. It is shown that in order to determine defect absorption spectra using the Kubo-Greenwood formula, the indefinite integral in this formula must be written in a certain form. It was discovered that electronic transitions involving defect states are divided into two parts depending on the energy of absorbed photons. The values of the partial defect absorption spectrum at low energies of absorbed photons have almost no effect on the overall defect absorption spectrum. It has been established that the main role in determining the defect absorption spectrum is played by partial spectra determined by optical transitions of electrons between allowed bands and defects. It is shown that with a power-law distribution of the density of electronic states in allowed bands, the spectra of optical transitions between them and defects do not depend on the value of this power.

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Published
2023-12-02
Cited
How to Cite
Ikramov, R. G., Muminov, K. A., Nuritdinova, M. A., Sutonov, B. Q., Kholmirzayev, O. T., & Mamakhanov, A. A. (2023). Dangerous Bonds Individual of Hydrogenated Amorphous Silicon and Defect Absorption Spectra. East European Journal of Physics, (4), 244-250. https://doi.org/10.26565/2312-4334-2023-4-30