Properties of “Higher Manganese Silicide-Silicon” Heterostructure

Keywords: Higher, Manganese, Silicide, Forbidden gap, Properties, Structure


Based on the diffusion technology, many scientists and specialists have conducted research on obtaining materials that are fundamentally different in electrical and photo-thermal parameters from the original material by introducing various input atoms into semiconductor materials and creating deep energy levels in their band gap. The electrical, photoelectric, optical, and magnetic properties of these semiconductor materials have been extensively studied with metal group elements, isovalent elements, and rare earth elements added to silicon through the process of growth, ion implantation, or diffusion from the gaseous state. The technology of introducing impurity atoms into silicon by the diffusion method is distinguished from other methods in its simplicity, energy efficiency, and low cost. Up-to-date, the technology of changing the resistivity and conductivity of the initial sample by diffusion of manganese atoms into single-crystal silicon is studied insufficiently. In the article, it was determined that when manganese atoms diffuse into silicon, a high-manganese silicide is formed on its surface and in the near-surface layer. Based on the analysis of the experimental results, the thermal EMF (electromotive force) in Mn4Si7-Si -<Mn>-Mn4Si7  structures in a certain temperature range and under illumination (with monochromatic or integrated light) is explained by the fact that it based on the Pelte effect, observed in semiconductors.The volt-ampere characteristics (VAC) of the obtained structures were measured at various temperatures, in the dark and in the light. Formation of a boundary layer with high resistivity at the boundary of the higher manganese-silicon transition, the transition from higher manganese silicide to the base of the structure due to the effect of ionization of pores during illumination of structures and external influence. The applied field was clarified based on VAC results. The manganese high silicide layer formed on the silicon surface has the properties of a semiconductor, and the formation of a heterojunction upon transition to silicon is shown on the basis of the sphere diagram.


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A.E. Gershinsky, A.V. Rzhanov, and E.I. Cherenkov, “Thin-film silicides in microelectronics,” Microelectronics, 11(2), 83-94 (1982). (in Russian)

V.K. Zaitsev, V.I. Tarasov, and A.A. Adilbekov, “Metal–nonmetal transition in compensated higher manganese silicide,” PTT, 16(3), 581-584 (1976). (in Russian)

V.V. Ilchenko, and V.I. Strikha, “Rearangement of the electronic structure of the metal-silicon silicide interface during low-temperature annealing,” Ukrainian Physical journal, 28(2), 248-252 (1983). (in Russian)

J.Pout, K.Tu, and J.Meyer, Thin films: Mutual Diffusion and Reaction, (Mir, Moscow, 1982). (in Russian)

N.Egwunyenga, B.Josephinea, S.Okunzuwa, and L.Imosobome, “Synthesis of SnS/SnO nanostructure material for photovoltaic application,” East Eur. J. Phys. (1), 154 (2023).

M.K.Bahadyrkhanov, T.S.Kamilov, A.Zh.Khusanov, G.I.Ivakin, and I.S. Zanaveskina, “Investigation of the effect of the transition layer on photovoltaic properties in the structures of higher manganese silicide (HSM) -Si-M,” Surface. X-ray, synchrotron and neutron studies, (6), 100 (2002).

A.A. Rysbaev, Zh.B. Khuzhaniyazov, B.E. Khayriddinov, and I.R. Bikbulatov, Structure and properties of nanoscale films of metal silicides, (Adad plyus, Tashkent, 2017).

T.S.Kamilov, V.V.Klechkovskaya, A.A.Rysbaev, A.S. Orekhov, Sh.Kh. Dzhuraev, and A.S. Kasymov, “Influence of structural defects in silicon on formation of photosensitive heterostructures Mn_4 Si_7 Si Mn_4 Si_7 and Mn_4 Si_7 Si M,” EuroAsian journal of physics and functional materials, 2(4), 360-366 (2019).

M.K. Bakhadyrkhanov, S.B. Islamov, N.F. Zikrillaev, and K. Khaydarov, “Nanoscale varizon structure in silicon with multicharged nanoclusters,” Microelectronics, 42(6), 444-446 (2013). (in Russian)

G.V. Samsonov, L.A. Dvorina, and B.M. Rud, Silicides, (Metallurgy, Moscow, 1979). (in Russian)

M.K. Bakhadirkhanov, S.N. Ibodullaev, N.F. Zikrillaev et al., “An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms,” Tech. Phys. Lett. 47, 641-644 (2021).

V.V. Klechkovskaya, T.S. Kamilov, S.I. Avdasheva, S.S. Khudaiberdiev, and V.I. Muratova, “Features of the crystal structure of films of higher manganese silicide painted on silicon,” Crystallography, 39(5), 894-899 (1994). (in Russian)

M.K. Bakhadyrkhanov, N.F. Zikrillaev, S.B. Isamov, and M.O. Tursunov, “Anamalous Photoelectrics Phenomenia in Silicon with Nanoclusters of Managanese atoms,” Semiconductors, 55(6), 542-545 (2021).

M.K. Bakhadyrkhanov, S.B. Isamov, and N.F. Zikrillaev, “Photodetectors of IR radiation in the region λ=1.5÷8 µm based on silicon with multi-charge nanoclusters of manganese atoms,” Microelectronics, 42(6), 444-446 (2012).

A.A. Rysbaev, Zh.B. Khuzhaniyazov, L.H. Rakhimova, and A.M. Rakhimov, “On the formation of new surface superstructures in the formation of thin nanoscale films of silicides,” Uzbek Physical Journal, 15(2), 26-32 (2013). (in Russian)

V.I. Strikha, Contact phenomena in semiconductors, (Vyshcha Shkola, Kyiv, 1982). (in Russian)

M.K. Bakhadyrkhanov, and S.B. Islamov, “Physical foundations of the formation of the silicon-based heterovarizonic structure,” Technical Physics, 14, 2211 (2022).

How to Cite
Kurbonaliev, K. K. ugli, Zikrillaev, N. F., & Khusanov, A. Z. (2023). Properties of “Higher Manganese Silicide-Silicon” Heterostructure. East European Journal of Physics, (3), 291-295.

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