The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>
This paper presents the results of studies of the effect of isothermal annealing at temperatures T = 673¸1473 K in the time interval 5¸60 minutes on the electrical properties of silicon, simultaneously alloyed with nickel and copper. Samples of n-Si<Ni,Cu> were obtained on the basis of the starting material - single-crystal silicon, grown by the Czochralski method with the initial resistivity r = 0.3 Ohm×cm. Diffusion was carried out at a temperature of 1523 K for 2 hours. After that, the samples were cooled at a rate of 0.1 K/s. The morphological parameters of impurity nickel and copper atom clusters formed in the bulk of silicon were measured by electron probe microanalysis on a modern Superprobe JXA-8800R setup. As it turned out, in the volume of n-Si<Ni,Cu> samples, clusters of impurity atoms with different geometric shapes are formed, the sizes of which reach up to 500 nm. The electrical properties of the samples were studied by the Hall effect method using an Ecopia HMS-7000 instrument. It was revealed that under the influence of thermal annealing (TA) at T≥1273 K, impurity clusters decompose, which leads to an increase in the resistivity of n‑Si<Ni,Cu> samples. After exposure to TA at Т=1273 K for 15 minutes, the density of impurity nanoaccumulations of acicular and lenticular shapes sharply decreases in the sample volume. Under the influence of TA at T = 1473 K for 10 minutes in the volume of the sample, the decay of impurity nanoclusters with a spherical shape is observed. Also presented are the results of changes in the density of impurity clusters, as well as structural analyzes of the samples before and after exposure to thermal annealing.
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