Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy
Silicon doped with gadolinium and silver impurities were studied using a Renishaw InVia Raman spectrometer. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. Some changes are observed in the Raman spectra of gadolinium-doped silicon samples compared to the initial sample. It has been experimentally found that an increase in the silver impurity concentration in gadolinium-doped silicon leads to a smoothing of the Raman spectrum, which indicates the formation of a more perfect crystal structure.
Kh.S. Daliev, Sh.B. Utamuradova, O.A. Bozorova, and Sh.Kh. Daliev, Geliotekhnika. 41(1), 80 (2005).
Kh.S. Daliev, Sh.B. Utamuradova, I.Kh. Khamidzhonov, A.Zh. Akbarov, I.K. Mirzairova, and Zh. Akimova, Inorganic Materials, 37(5), 436 (2001). https://doi.org/10.1023/A:1017556212569
B.E. Egamberdiev, Sh.B. Utamurodova, S.A. Tachilin, M.A. Karimov, K.Yu. Rashidov, A.R. Kakhramonov, M.K. Kurbanov, et al., Applied Solar Energy, 58(4), 490 (2022). https://doi.org/10.3103/S0003701X22040065
Sh.B. Utamuradova, A.V. Stanchik, K.M. Fayzullaev, and B.A. Bakirov, Applied Physics, (2), 33 (2022). https://applphys.orion-ir.ru/appl-22/22-2/PF-22-2-33_RU.pdf (in Russian)
M. Yang, D. Huang, P. Hao, F. Zhang, X. Hou, and X. Wang, J. Appl. Phys. 75 (1), 651 (1993). https://doi.org/10.1063/1.355808
H. Tanino, A. Kuprin, and H. Deai, Phys. Rev. B, 53 (4), 1937 (1996), https://doi.org/10.1103/PhysRevB.53.1937
Sh.B. Utamuradova, Sh.Kh. Daliyev, K.M. Fayzullayev, D.A. Rakhmanov, and J.Sh. Zarifbayev, New Materials, Compounds and Applications, 7(1), 37 (2023). http://jomardpublishing.com/UploadFiles/Files/journals/NMCA/V7N1/Utamuradova_et_al.pdf
N.R.C. Raju, K.J. Kumar, and A. Subrahmanyam, AIP Conference Proceedings, 1267(1), 1005 (2010). https://doi.org/10.1063/1.3482261
Sh.B. Utamuradova, Kh.S. Daliev, Sh.Kh. Daliev, and K.M. Fayzullaev, Applied Physics, (6), 90 (2019).
T. Grzyb, R.J. Wiglusz, V. Nagirnyi, A. Kotlov, and S. Lisa, Dalton Trans. 43(18), 6925 (2014), https://doi.org/10.1039/C4DT00338A
M. Ivanda, O. Gamulin, and W. Kiefer, Journal of Molecular Structure. 480–481, 651 (1999), https://doi.org/10.1016/s0022-2860(98)00922-3
W. Wei, Vacuum. 81(7), 857 (2007). https://doi.org/10.1016/j.vacuum.2006.10.005
D. Abidi, B. Jusserand, and J.-L. Fave, Phys. Rev. B, 82(7), 075210 (2010), https://doi.org/10.1103/PhysRevB.82.075210
C. Smit, R.A. C.M.M. van Swaaij, H. Donker, A.M.H.N. Petit, W.M.M. Kessels and M.C.M. van de Sanden, Journal of Applied Physics 94(5), 3582 (2003), https://doi.org/10.1063/1.1596364
A.M. Grishin, A. Jalalian, and M.I. Tsindlekht, AIP Advances 5(5), 057104 (2015), https://doi.org/10.1063/1.4919810
P. G. Spizzirri, J.-H. Fang, S. Rubanov, E. Gauja, S. Prawer, Materials Forum. 34, (2010).
S. Agnello, D. Di Francesca, A. Alessi, G. Iovino, M. Cannas, S. Girard, A. Boukenter, and Y. Ouerdane, Journal of Applied Physics. 114(10), 104305 (2013), https://doi.org/10.1063/1.4820940
Sh.B. Utamuradova, and E.M. Naurzalieva, Semiconductor Physics and Microelectronics. 4(1), 8 (2022) (in Russian)
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