Synthesis of SnS/SnO Nanostructure Material for Photovoltaic Application
Abstract
Research Highlights
- Successfully synthesized SnS/SnO nanostructured material using successors ionic layer absorption and reaction (SILAR) technique.
- Granular nanocrystals were visible in the materials, and they were strewn unevenly and randomly throughout the glass surface.
- It was found that the sample processed at room temperature had the largest energy band gap.
- The transmittance in the visible area of the spectrum was stable and SnS/SnO was at its maximum in the UV region
In this research, the SILAR method was used to synthesize environmentally-friendly SnS/SnO material for photovoltaic application, where 0.1 M of tin (II) chloride dihydrate (SnCl2.2H2O) was used to create the cationic precursor solution, and 0.01 M of thioacetamide (C2H5NS) was used to create the anionic precursor solution. The X-ray diffraction patterns of SnS/SnO material deposited on glass substrate at various deposition temperatures recorded a major peak at 45oC at 2 theta of 31.8997o, which corresponds to the face-centered cubic crystal structure (FCC). Diffraction peaks are visible in the pattern at planes 111, 200, 210, 211, and 300, which correspond to angles of 26.58°, 31.89°, 39.61°, 44.18°, and 54.85°, respectively. It was discovered that the crystallite/grain size and the lattice parameters decrease as the temperature of the deposition material rises. Granular nanocrystals were visible in the materials, and they were strewn unevenly and randomly throughout the glass surface. The spectra of the absorbance demonstrate that as light radiation passed through SnS/SnO films, it absorbed radiation as the wavelength increased from the UV region to the ultraviolet region of the spectra. It was discovered that the precursor temperature influences the material's absorbance; as the temperature rises, the absorbance decreases, making SnS/SnO an excellent material for photovoltaic systems. The transmittance in the visible area of the spectrum was stable and SnS/SnO was at its maximum in the UV region, it increased as the wavelength increased in the NIR region. It was found that the sample processed at room temperature had the largest energy band gap. SnS/SnO reveals an increase in thickness from 114.42 – 116.54 nm which resulted in a downturn in the resistivity of the deposited film from 9.040×109 – 6.455×109 (Ω·cm) while the conductivity of the deposited material increased from 1.106×10-10 – 1.549×10-10 (Ω·cm)-1.
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