Thermoelectric Coefficients Of Heavily Doped N-Type Silicon
In this study the thermoelectric effect is investigated in terms of thermoelectric power, Figure of merit(ZT), and power factor. The calculations were carried out based on Boltzmann transport equation by taking ionized impurity scattering as a dominant mechanism for heavily doped n-type silicon at 300K with charge concentration varies from 2×1018 /cm3 – 20×1020 /cm3. It is known that doping of materials can induce Fermi level shifts and doping can also induce changes of the transport mechanisms. The result of this study shows doping also induces changes in thermoelectric power, Figure of merit, and power factor. The magnitude of the change is different for consideration of parabolic density of states and non-parabolic modified density of states which amounts to 16.7% for thermoelectric power, from 0.059% - 84.1% for Figure of merit(ZT) in favor of non-parabolic consideration respectively. There is also a difference of 39.9% for power factor with respect to relaxation time between the two cases in favor of the parabolic consideration.
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