Influence of distribution of scattering in collision cascades of recoil atoms on pattern formation of amorphous si surface under irradiation of Ar ion with energy 1 keV
Keywords:
simulation, binary collision approximation, surface pattern, ion beam sputtering
Abstract
The distribution of scatterings in collision cascades of recoil atoms under 1 keV Ar ion bombardment has been investigated by simulation in binary collision approximation. The strong dependency of mean cosine of angle between recoil atom direction and primary ion one has been found. The numerical calculation in the approximation of large incidence angle has revealed the main feature in distribution of scatterings which is responsible for absence of pattern formation at the dynamic simulation without the account of transfer of atoms under the surface of target.
Downloads
Download data is not yet available.
References
Makeev М. A., Cuerno R., Barabasi A.-L. Morphology of ion-sputtered surfaces//Nuci. Instr. And Meth. B.-2002. -Vol. 197. - P. 185-227.
Cuerno R., Castro M., Munoz-Garcia J., Ga-go R., Vazquez L. Nanoscale pattern formation at surfaces under ion-beam sputtering: a perspective from continuum mode!s//Nucl. Instr. and Meth. B. - 2011. - Vol. 269. - P. 894-900.
Pahlovy S.A., Mahmud S.F., Yanagimoto K., Miyamoto I. Ripple formation on atomically flat cleaved Si surface with roughness of 0.038 nm rms by low-energy Ar'T ion bombardment//.!. Vac. Sci. Technol. A. - 2011. - Vol. 29, No. 2. - P. 021015-021019.
Basu T, Mohanty J.R., Som T. Unusual pattern formation on Si( 100) due to low energy ion bombardment/'/Applied Surface Science. — 2012.— Vol. 258.-P.9944-9948.
Mishra R, Ghose D. The rotation of ripple pattern and the shape of the collision cascade in ion sputtered thin metal films//J. Appl. Phys. - 2008. -Vol. 104.-P.094305-094309.
Bradley R.M., Harper J.M.E. Theory of ripple topography induced by ion bombardment//J. Vac. Sci. Technol. A.- 1988. - Vol. 6. - P. 2390-2395.
Feix M., Hartmann A.K., Kree R., Munoz-Garcia J. Cuerno R. Influence of collision cascade statistics on pattern formation of ion-sputtered surfaces//Phys. Rev. B. - 2005. - Vol. 71. - P. 125407-125420.
Hossain M.Z., Freund J.B., Johnson H.T. Ion impact energy distribution and sputtering of Si and Ge//J. Appl. Phys. - 2012. - Vol. 111. - P.103513-103518.
Gubarev A.A., Yakovlev D.A. Modelirovanie formirovaniya rel’efa poverhnosti kremniya pri obluchenii ionami argona s energiej 1 keV// Poverhnost’. Rentgen., sinhrotr. і nejtron. issled.
-2012. - N° 8. - S. 8-16.
-
Gubarev A. A., Yakovlev D.A. Imitacionnoe modelirovanie obrazovaniya rel’efa na pervonachal- no ploskoj poverhnosti tverdogo tela. Chast’ 1. Raschet bez ucheta modifikacii misheni v ob‘eme //Vestnik Doneckogo nacional’nogo universiteta. Ser. A: Estestv. nauki. - 2009. - Vyp. 2. - S. 198-205.
Hautala M., Koponen I. Simulation ofsubmicron- scale erosion and ripple formation on ion bombarded solid surfaces//Nuc), Instr. and Meth. B.- 1996.-Vol. 117.-P.95-100.
Koponen I., Hautala M., Sievanen O.-P. Simulation of self-affine roughening and ripple formation on ion bombardment amorphous carbon surface//Nucl. Instr. and Meth. B. - 1997. - Vol. 129.-P.349-355.
Eckstein W. Computer simulation of ion-solid interactions.-New York: Springer-Verlag, 1991. -296 p.
Ziegler J.F. Biersack J.P., Littmark U. The stopping and range of ions in solids. - New York: Pergamon Press, 1985. - 321 p.
Kendall M., St’yuart A. Teoriya raspredelenij. - M.: Nauka, 1966.- 588 c.
Tablicy parametrov prostranstvennogo raspre- deleniya ionno-implantirovannyh primesej/Pod. Red. A.F. Burenkov, F.F. Komarov, M.A. Ku- mahov, M.M. Temkin. - Minsk: Izd-vo BGU, 1980.-352
Cuerno R., Castro M., Munoz-Garcia J., Ga-go R., Vazquez L. Nanoscale pattern formation at surfaces under ion-beam sputtering: a perspective from continuum mode!s//Nucl. Instr. and Meth. B. - 2011. - Vol. 269. - P. 894-900.
Pahlovy S.A., Mahmud S.F., Yanagimoto K., Miyamoto I. Ripple formation on atomically flat cleaved Si surface with roughness of 0.038 nm rms by low-energy Ar'T ion bombardment//.!. Vac. Sci. Technol. A. - 2011. - Vol. 29, No. 2. - P. 021015-021019.
Basu T, Mohanty J.R., Som T. Unusual pattern formation on Si( 100) due to low energy ion bombardment/'/Applied Surface Science. — 2012.— Vol. 258.-P.9944-9948.
Mishra R, Ghose D. The rotation of ripple pattern and the shape of the collision cascade in ion sputtered thin metal films//J. Appl. Phys. - 2008. -Vol. 104.-P.094305-094309.
Bradley R.M., Harper J.M.E. Theory of ripple topography induced by ion bombardment//J. Vac. Sci. Technol. A.- 1988. - Vol. 6. - P. 2390-2395.
Feix M., Hartmann A.K., Kree R., Munoz-Garcia J. Cuerno R. Influence of collision cascade statistics on pattern formation of ion-sputtered surfaces//Phys. Rev. B. - 2005. - Vol. 71. - P. 125407-125420.
Hossain M.Z., Freund J.B., Johnson H.T. Ion impact energy distribution and sputtering of Si and Ge//J. Appl. Phys. - 2012. - Vol. 111. - P.103513-103518.
Gubarev A.A., Yakovlev D.A. Modelirovanie formirovaniya rel’efa poverhnosti kremniya pri obluchenii ionami argona s energiej 1 keV// Poverhnost’. Rentgen., sinhrotr. і nejtron. issled.
-2012. - N° 8. - S. 8-16.
-
Gubarev A. A., Yakovlev D.A. Imitacionnoe modelirovanie obrazovaniya rel’efa na pervonachal- no ploskoj poverhnosti tverdogo tela. Chast’ 1. Raschet bez ucheta modifikacii misheni v ob‘eme //Vestnik Doneckogo nacional’nogo universiteta. Ser. A: Estestv. nauki. - 2009. - Vyp. 2. - S. 198-205.
Hautala M., Koponen I. Simulation ofsubmicron- scale erosion and ripple formation on ion bombarded solid surfaces//Nuc), Instr. and Meth. B.- 1996.-Vol. 117.-P.95-100.
Koponen I., Hautala M., Sievanen O.-P. Simulation of self-affine roughening and ripple formation on ion bombardment amorphous carbon surface//Nucl. Instr. and Meth. B. - 1997. - Vol. 129.-P.349-355.
Eckstein W. Computer simulation of ion-solid interactions.-New York: Springer-Verlag, 1991. -296 p.
Ziegler J.F. Biersack J.P., Littmark U. The stopping and range of ions in solids. - New York: Pergamon Press, 1985. - 321 p.
Kendall M., St’yuart A. Teoriya raspredelenij. - M.: Nauka, 1966.- 588 c.
Tablicy parametrov prostranstvennogo raspre- deleniya ionno-implantirovannyh primesej/Pod. Red. A.F. Burenkov, F.F. Komarov, M.A. Ku- mahov, M.M. Temkin. - Minsk: Izd-vo BGU, 1980.-352
Published
2017-07-28
How to Cite
Губарев, А. А. (2017). Influence of distribution of scattering in collision cascades of recoil atoms on pattern formation of amorphous si surface under irradiation of Ar ion with energy 1 keV. Journal of Surface Physics and Engineering, 11(1), 46 - 62. Retrieved from https://periodicals.karazin.ua/pse/article/view/8785
Section
Статті
У відповідності з типовим шаблоном.
