Research of electric and photo-electric properties In-CdSxTe1-x-Si-In structures
Keywords:
solid solution, film, spectrum, photosensitivity
Abstract
It is made heterojunction n/Si-n/CdSxTe1-x by a method of a vacuum dusting of a film of firm solution CdSxTe1-x on a surface monocrystalline n/Si. The basic electric and photo-electric properties of heterojunction are investigated. Values of a constant crystal lattice of firm solution CdSxTe1-x on heterostructure border n/Si-n/ CdSxTe1-x are defined.
Downloads
Download data is not yet available.
References
Горелик С.С., Дашевский М.Я. Материаловедение полупроводников и диэлектриков. – М.: МИСИС, 2003.
Лабораторные оптические приборы/ Под ред. А.А. Новицкого. – М.: Машиностроение, 1979. – 448 с.
Ohata K., Sarate J., Tanaka T.//Jpn. J. Appl. Phys. – 1973. – № 12. – С. 1641.
Bonnet D., Rabenhorst H.//Proc. Int. Conf. Physics and Chemistry of Semiconductor Heterojunction and Layer Structure. Hungary, Budapest, Akademio Kiado. – 1971. – Vol. 1. – P. 119.
Лабораторные оптические приборы/ Под ред. А.А. Новицкого. – М.: Машиностроение, 1979. – 448 с.
Ohata K., Sarate J., Tanaka T.//Jpn. J. Appl. Phys. – 1973. – № 12. – С. 1641.
Bonnet D., Rabenhorst H.//Proc. Int. Conf. Physics and Chemistry of Semiconductor Heterojunction and Layer Structure. Hungary, Budapest, Akademio Kiado. – 1971. – Vol. 1. – P. 119.
Published
2017-07-28
How to Cite
Сапаев, И. Б. (2017). Research of electric and photo-electric properties In-CdSxTe1-x-Si-In structures. Journal of Surface Physics and Engineering, 11(2), 223 - 227. Retrieved from https://periodicals.karazin.ua/pse/article/view/8776
Section
Статті
У відповідності з типовим шаблоном.
