The heating of electrons and holes in an asymmetric p-n-junction, located in the microwave field
Keywords:
hot electron asymmetric p-n-transition Seebeck coefficient of coupling
Abstract
Studied currents and EMF arising pn-junctions under the influence of a strong microwave field with the simultaneous heating of electrons and holes. Revealed that, in asymmetric p-n-junction in a strong microwave field for the analysis of voltage and current necessary to consider both the heating of the electrons and holes. Found that the total current and the generated voltage is not the temperature of hot electrons, and the temperature of the media, which are dominant.
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References
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Шамирзаев С.Х., Гулямов Г., Дадамирзаев М.Г., Гулямов А.Г.//ФТП. − 2009. −Т. 43, № 5.
Дадамирзаев М.Г.//ФТП. − 2011. − Т. 45. − С. 299.
Баранский П., Клочков В., Потыкевич И. Полупроводниковая электроника. Справочник. − К.: Наукова Думка, 1975. − 704 с.
Published
2017-07-28
How to Cite
Дадамирзаев, М. Г. (2017). The heating of electrons and holes in an asymmetric p-n-junction, located in the microwave field. Journal of Surface Physics and Engineering, 11(2), 191 - 194. Retrieved from https://periodicals.karazin.ua/pse/article/view/8770
Section
Статті
У відповідності з типовим шаблоном.
