Definitions of localized energy states on the quasi-fermi level with changing times
Keywords:
low temperature localized state spectroscopy of discrete states, increasing the accuracy of the results, the discrete spectrum of the density of states
Abstract
Studies of the generation-recombination process of electrons from the filled localized surface states at the time of their lives. The applicability of the derivative of the Dirac distribution as δ-function at low temperatures in order to study the temperature dependence of the spectrum of the density of surface states. To improve the accuracy of the results in the paper, a method of discrete states spectroscopy on quasi-Fermi level with the changing times.
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References
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Guliamov G., Karimov I.N., Sharibaev N.Yu. Erkaboev U. Determination of the density of surface states at the semiconductor dielectric structures in Al-SiO2-Si and Al-SiO2-n-Si
Guliamov G., Sharibaev N.Yu. Determination of the density of surface states of the interface, the semiconductor-insulator in the MIS structure// FTP. − 2011. − Vol. 45, No. 2. − P. 178-182.
Nosov Y.R., Shilin V.A. Fundamentals of Physics, charge-coupled devices. − M.: Nauka, 1986.
Guliamov G., Sharibaev N.Yu. X-ray, synchrotron and neutron research//Surface. − 2012, No. 9. − P. 13-17.
Zeldovich J.B., Myshkis A.D. Elements of applied mathematics. − M.: Nauka, 1972. − 592 p.
Karimov I.N. Basics of optimization of the physical processes at the semiconductor-insulator. − Dis . doc., Sci. Science, Tashkent, 1995. − 232 p.
Published
2017-07-21
How to Cite
Guliamov, G., Sharibaev, N. Y., & Erkaboev, U. I. (2017). Definitions of localized energy states on the quasi-fermi level with changing times. Journal of Surface Physics and Engineering, 11(3), 275 - 278. Retrieved from https://periodicals.karazin.ua/pse/article/view/8759
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Статті
У відповідності з типовим шаблоном.