The injection photo diode on the basis of nSi-nCdS-n+CdS heterostructures
Keywords:
heterostructure, film, spectrum, injection
Abstract
It is shown that the nSi-nCdS-n+CdS heterostructures in operative (carrying) direction of current, while being exposed to low intensity radiation, operate as injection photodiodes. Their current sensitivity is Sλ ≈ 2.12 A/W at λ = 0.625 µm, which effectively represents a 4.2 increase in compare to spectral sensitivity of the ideal photo receiver at small wavelength of irradiation.
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References
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Stafeeyev V.I. FGUP Scientific Production Amalgamation. – M.: Orion, 2008. – 103 p.
Stafeeyev V.I. Influence of resistivity of the thickness of semiconductor on shape of currentvoltage characteristics of diode//JTF. – 1958. – № 8. – P. 1631.
Mirsagatov Sh.A., Aytbayev B.U., Rubinov V.M. //FTP. – 1996. – Vol. 30, №.3. – P. 550.
Ambrozyak. Design and technology of semiconductor photoelectric devices. – M.: The Soviet Radio, 1970. – 392 p.
Published
2017-07-21
How to Cite
Sapaev, I. B. (2017). The injection photo diode on the basis of nSi-nCdS-n+CdS heterostructures. Journal of Surface Physics and Engineering, 11(3), 260 - 262. Retrieved from https://periodicals.karazin.ua/pse/article/view/8756
Section
Статті
У відповідності з типовим шаблоном.
